相关论文: Spin-canting effects in GMR sensors with wide dyna…
Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…
Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz…
Understanding the rich physics of magnetization dynamics in perpendicular synthetic antiferromagnets (p-SAFs) is crucial for developing next-generation spintronic devices. In this work, we systematically investigate the magnetization…
Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
Synthetic antiferromagnets (SAFs) consist of two ferromagnetic layers that are antiferromagnetically coupled. These systems support complex dynamical magnetic excitations, where interlayer coupling gives rise to both in-phase (acoustic) and…
A new characteristic is observed in the training effect of perpendicular exchange bias. For Pt/Co/Pt/IrMn multilayers with perpendicular magnetic anisotropy, the magnetization reversal process is accompanied by pinned domain wall motion and…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes…
We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with…
Interest in planar Hall effect (PHE) sensors has re-emerged in recent years due to their promising potential for a wide range of applications, particularly in biotechnology. Sensor sensitivity can be enhanced by lowering the effective…
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the…
Ferromagnetic (FM) layers separated by nonmagnetic metallic spacer layers can exhibit Ruderman Kittel Kasuya Yosida (RKKY) coupling which may lead to a stable synthetic antiferromagnetic (SAF) phase. In this article we study magnetization…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
The Interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) chirally couples spins in different ferromagnetic layers of multilayer heterostructures. So far, samples with IL-DMI have been investigated utilizing magnetometry and…
We systematically studied the magnetoresistance effect in a Pt/(CoNi)n multilayer system with perpendicular magnetic anisotropy and the fcc (111) texture. The angular dependence of magnetoresistance, including high-order cosine terms, was…
Strong ferromagnetic interlayer exchange couplings $J$ in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination…
Synthetic antiferromagnetic layers (SAF) are incorporated into spin transfer nanopillars giving a layer composition [Co(bottom)/Ru/Co(fixed)]/Cu/Co(free), where square brackets indicate the SAF. The Co(bottom) and Co(fixed) layers are…