相关论文: YBCO-based non-volatile ReRAM tested in Low Earth …
We report measurements of the low field structure of the magnetic vortex lattice in an untwinned YBCO single-crystal platelet. Measurements were carried out using a novel atomic beam magnetic resonance (ABMR) technique. For a 10.7 G field…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…
The implementation of current deep learning training algorithms is power-hungry, owing to data transfer between memory and logic units. Oxide-based RRAMs are outstanding candidates to implement in-memory computing, which is less…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…
In the works of E. Podkletnov et al. (for example [Physica C: Superconductivity, 1992, Vol. 203, p. 441]), a unique experiment is described in which a significant reduction in the weight of various test bodies was observed when placed above…
Our Robust, Explainable Autonomy for Scientific Icy Moon Operations (REASIMO) effort contributes to NASA's Concepts for Ocean worlds Life Detection Technology (COLDTech) program, which explores science platform technologies for ocean worlds…
The Daedalus 2 mission aboard REXUS 29 is a technology demonstrator for an alternative descent mechanism for very high altitude drops based on auto-rotation. It consists of two probes that are ejected from a sounding rocket at an altitude…
Transport across an La$_{0.7}$Sr$_{0.3}MnO$_{3}/YBa$_{2}Cu$_{3}$O$_{7}$(LSMO/YBCO), interface is studied as a function of temperature and surface morphology. For comparison, control measurements are performed in non-magnetic…
The in-plane normal-state resistivity of Zn-doped YBa2Cu3O7-d and heavily underdoped pure YBCO single crystals is measured down to low temperatures under magnetic fields up to 18 T. We found that the temperature dependence of the…
Simultaneous Localization and Mapping (SLAM) is considered to be an essential capability for intelligent vehicles and mobile robots. However, most of the current lidar SLAM approaches are based on the assumption of a static environment.…
This work demonstrates that porous helical WOx architectures enable a distinct low-power regime for planar ITO/WOx/ITO resistive random-access devices. While thin film and helical devices behave similarly at a 5 mA compliance, only helical…
An electrically-controllable, solid-state, reversible device for sourcing and sinking alkali vapor is presented. When placed inside an alkali vapor cell, both an increase and decrease of the rubidium vapor density by a factor of two are…
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…
We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore…
Molecular dynamics calculations of inelastic collisions of atomic oxygen with molecular nitrogen are known to show orders of magnitude discrepancies with experimental results in the range from room temperature to many thousands of degrees…