相关论文: Improving Phase Change Memory Performance with Dat…

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

Phase-change memory (PCM) devices have multiple banks to serve memory requests in parallel. Unfortunately, if two requests go to the same bank, they have to be served one after another, leading to lower system performance. We observe that a…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…

With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…

Traditional DRAM-based main memory systems face several challenges with memory refresh overhead, high latency, and low throughput as the industry moves towards smaller DRAM cells. These issues have been exacerbated by the emergence of…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…

Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…

Memory-centric computing aims to enable computation capability in and near all places where data is generated and stored. As such, it can greatly reduce the large negative performance and energy impact of data access and data movement, by…

Memory-centric computing aims to enable computation capability in and near all places where data is generated and stored. As such, it can greatly reduce the large negative performance and energy impact of data access and data movement, by…

PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…

3-D cross point phase change memory (PCM) is a promising emerging memory. However, dynamic performances of 3-D cross point PCM are limited and the role of bias scheme is unknown. Previous studies on bias schemes for planar memories use…

Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…