相关论文: Electrostatic effect on off-field ferroelectric hy…
The magnetization reversal process in thin-film ferromagnetic elements with surface anisotropy of various shapes and sizes is investigated by means of numerical simulation. The dependence of the perpendicular and in-plane hysteresis loops…
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics,…
The electrical generation and detection of elastic waves are the foundation for acousto-electronic and acousto-optic systems. For surface-acoustic-wave devices, micro-/nano-electromechanical systems, and phononic crystals, tailoring the…
We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are…
Piezoelectricity is a technologically important property of certain insulators in which mechanical strain induces an electrical polarization. However, the rate at which a piezoelectric response can be established over a macroscopic volume…
The first epitaxial ferroelectric wurtzite film with clear polarization-electric field hysteresis behavior is presented. The coercive field of this epitaxial Al0.7Sc0.3N film on W/c-sapphire substrate is 0.4 +- 0.3 MV cm-1 (8 %) smaller…
Mechanical strain can be used to control physical properties in materials. The experimental investigation of strain-induced effects at the nanoscale is of importance not only for its fundamental aspects, but also for the development of…
Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like'' and ``bubble-like'' polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning…
In 2D field effect transistors the gate electrostatically dopes the 2D semiconductor (2DSC) channel, tuning the Fermi level. In principle, Kelvin probe force microscopy (KPFM) can detect the Fermi level, and its dependence on gate bias as…
We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally…
This study has numerically investigated the charge-heterogeneity effects in the electroviscous flow of symmetric ($1$:$1$) electrolyte liquid through a uniform slit microfluidic device. The Poisson's, Nernst-Planck (N-P), Navier-Stokes…
We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale…
We present a theoretical study of the measurements of photoinduced force microscopy (PiFM) for composite molecular systems. Using the discrete dipole approximation, we calculate the self-consistent response electric field of the entire…
Using Langevin Dynamics simulations, we study a simple model of interacting-polymer under a periodic force. The force-extension curve strongly depends on the magnitude of the amplitude $(F)$ and the frequency ($\nu$) of the applied force.…
We investigate dynamic hysteresis in ferromagnetic thin films with zigzag domain walls. We introduce a discrete model describing the motion of a wall in a disordered ferromagnet with in-plane magnetization, driven by an external magnetic…
We report a more than 10-fold enhancement of the piezoelectric coefficient $d_{33}$ of polycrystalline CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$) films when interfacing them with ferroelectric PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT). Piezo-response force…
A possible scenario for electric-field induced critical current enhancement in screw dislocated YBCO thin films is proposed based on the converse piezoelectric effect originated from a heavily defected medium of the superconducting films in…
For the first time we proposed the model for the calculations of the relaxor ferroelectrics films properties in the framework of the random field theory. We took into account the misfit strain between film and substrate as well as surface…
Electric field-induced studies, including phase transition and polarization hysteresis, for ferroelectric HfO2 at the atomic scale are critical since they can largely affect its application in ferroelectric and dielectric devices. However,…
A flexoelectric peridynamic (PD) theory is proposed. Using the PD framework, the formulation introduces, perhaps for the first time, a nanoscale flexoelectric coupling that entails non-uniform strain in centrosymmetric dielectrics. This…