相关论文: Spin-Dependent Charge-Carrier Recombination Proces…
We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well…
The rates of elementary photophysical processes in nanocrystals, such as carrier cooling, multiexciton generation, Auger recombination etc., are determined by monitoring the transient occupation of the lowest exciton band. The underlying…
Spin-polarized electrical transport is investigated in $ Al_{2}O_{3}/Ni_{80}Fe_{20}/Al_{2}O_{3}$ thin films for permalloy thickness between 6 and 20nm. The degree of spin-polarization of the current flowing in the plane of the film is…
Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much…
We report on THz absorption spectroscopy combined with high magnetic fields of polycrystalline RCrO3 (R= Pr, Sm, Er) aiming understanding spin wave resonances at their low temperature magnetic phases. Our measurements show that the…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
We discuss the charge carrier dynamics of the heavy-fermion compound CeCoIn$_5$ in the metallic regime measured by means of quasi-optical THz spectroscopy. The transmittance of electromagnetic radiation through a CeCoIn$_5$ thin film on a…
We investigated the mganetic field effects (MFEs) on electron mobility in tri-(8-hydroxyquinoline)-aluminum based light-emitting devices by transient-electroluminescence method upon application of various offset voltages. It is found the…
An experimental demonstration of electrical detection of coherent spin motion of weakly coupled, localized electron spins in thin Fullerene C60 films at room temperature is presented. Pulsed electrically detected magnetic resonance…
Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70…
Quantum technologic and spintronic applications require reliable semiconducting materials that enable a significant, long-living spin polarization of electronic excitations and offer the ability to manipulate it optically in an external…
Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples…
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…
We report ^{13}C NMR spectra and nuclear spin lattice relaxation rate 1/T_1 for a quasi-one-dimensional quarter-filled organic material (TMTTF)_{2}AsF_{6}, which undergoes charge ordering (T_{{CO}} = 102 K) and spin-Peierls phase…
Perovskite nanocrystals are a convenient model system for optical spin orientation and manipulation. However, its real potential might be underestimated due to the incomplete knowledge on spin relaxation times, which are obscured by the…
We have experimentally tested the hypothesis of free charge carrier mediated spin-transport in the small molecule organic semiconductor Alq3 at room temperature. A spin current was pumped into this material by pulsed ferromagnetic resonance…
We propose to use optical detection of magnetic resonance (ODMR) to measure the decoherence time T_{2} of a single electron spin in a semiconductor quantum dot. The electron is in one of the spin 1/2 states and a circularly polarized laser…
Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of…
Recent experiments in Pr(Nd)$_{0.5}$Ca$_{0.5}$MnO$_3$ thin films exhibited (multiple) reentrant charge ordering (CO) transitions with change of {\it temperature} T under fixed magnetic field H, which are in contrast to the results for the…
We study binary and the recently discovered process of ternary He-assisted recombination of H3+ ions with electrons in a low temperature afterglow plasma. The experiments are carried out over a broad range of pressures and temperatures of…