相关论文: Voltage- and temperature-dependent rare-earth dopa…
We demonstrate directional dependence of the self-modification of internal mesospin textures in magnetic metamaterials, arising from the coupling of the atomic- and mesoscopic length-scales. Dressing the mesospins in different directions…
The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect…
Multiferroic materials, particularly rare-earth orthochromates (RECrO$_3$), have garnered significant interest due to their unique magnetic and electric-polar properties, making them promising candidates for multifunctional devices.…
$R$V${_6}$Sn${_6}$ ($R$ = Y, Gd - Tm, Lu) single crystals are synthesized by Sn-flux method and their physical properties are characterized by magnetization, resistivity, and specific heat measurements. Powder X-ray diffraction patterns of…
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…
A model of magnetic interactions in the ordered ferromagnetic FePt is proposed on the basis of first-principles calculations of non-collinear magnetic configurations and shown to be capable of explaining recent measurements of magnetic…
We investigated electronic structure and magnetic anisotropy in the Fe/MgO interface of magnetic metal and dielectric insulator under the Cr layer of small electronegativity, by means of the first-principles density functional approach. The…
Motivated by its role as a central pillar of current theories of dynamics of spin ice in and out of equilibrium, we study the single-ion dynamics of the magnetic rare earth ions in their local environments, subject to the effective fields…
The magnetic anisotropy of antiferromagnets plays a crucial role in stabilising the magnetisation of many spintronic devices. In non-collinear antiferromagnets such as IrMn the symmetry and temperature dependence of the effective anisotropy…
Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal…
Materials based on the Sm-Co system exhibit remarkable magnetic performance due to their high Curie temperature, large saturation magnetization, and strong magnetic anisotropy, which are the result of the electronic structure in Co and Sm…
We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane…
We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…
Theories of the strange metal, the parent state of many high temperature superconductors, invariably involve an important role for correlations in the spin and charge degrees of freedom. The most distinctive signature of this state in the…
It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration,…
We show that there is a new mechanism for nonmonotonous behavior of magnetic field dependence of the electronic thermal conductivity of clean superconductors with nodes of the order parameter on the Fermi surface. In particular, for unitary…
The origins of the anomalous temperature dependence of magnetocrystalline anisotropy in (Fe$_{1-x}$Co$_{x}$)$_{2}$B alloys are elucidated using first-principles calculations within the disordered local moment model. Excellent agreement with…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
The ability to tune the competition between the in-plane and out-of-plane orientation of magnetization provides a means to construct thermal sensors with a sharp spin re-orientation transition at specific temperatures. We have observed such…
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we…