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Monolithic integration of solid-state color centers with photonic elements of the same material is a promising approach to overcome the constraints of fabrication complexity and coupling losses in traditional hybrid integration approaches.…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
Visible-spectrum photonic integrated circuits (PICs) present compact and scalable solutions for emerging technologies including quantum computing, biosensing, and virtual/augmented reality. Realizing their full potential requires the…
Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of…
Silicon photonic integrated circuit (PIC) builds on the demand for a low cost approach from established silicon-based manufacturing infrastructure traditionally built for electronics. Besides its natural abundance, silicon has desirable…
The explosive growth of artificial intelligence, cloud computing, and large-scale machine learning is driving an urgent demand for short-reach optical interconnects featuring large bandwidth, low power consumption, high integration density,…
The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V…
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require…
The rapid development of quantum information processors has accelerated the demand for technologies that enable quantum networking. One promising approach uses mechanical resonators as an intermediary between microwave and optical fields.…
Integrated quantum photonics requires compact, efficient, and low-power phase modulators. While silicon nitride (SiN) is a promising platform, existing modulators suffer from high power consumption, thermal crosstalk, or high driving…
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Up to date, it remains an open challenge to realize an…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
Photonic integrated circuits that are manufactured with mature semiconductor technology hold great promise for realizing scalable quantum technology. Efficient interfaces between quantum emitters and nanophotonic devices are crucial…
Thin film lithium niobate (TFLN) has become an platform for modern integrated circuits due to its excellent optical properties. With the development of rare earth ion doped TFLN, important breakthroughs of on-chip microlasers has emerged…
Most existing implementations of silicon nitride photonic crystal cavities rely on suspended membranes due to the low refractive index of silicon nitride. Such floating membranes are not mechanically robust, making them suboptimal for…
Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…