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Silicon nanocrystals (Si NCs) have shown great promise for electroluminescent and photoluminescent applications. In order to optimize the properties of Si NC devices, however, electronic transport in Si NCs films needs to be thoroughly…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…
Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order…
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in…
Sulfide chalcopyrite, Cu(In,Ga)S2, having wide bandgap (larger than 1.5 eV), favorable optoelectronic properties, and high stability, is a promising top-cell absorber for tandem applications. Adapting device structures optimized for 1.0 -…
Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and…
The structure-property relation of nanostructured Al-doped ZnO thin films has been investigated in detail through a systematic variation of structure and morphology, with particular emphasis on how they affect optical and electrical…
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible…
We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device…
The current research work encompasses design modelling and fabrication of vertically aligned nanowire metal oxide semiconductor based voltage tunable quantum dot devices for optoelectronic applications. A novel device scheme is proposed for…
Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit…
Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the…
A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer…
Silicon nitride photonics has enabled integration of a variety of components for applications in linear and nonlinear optics, including telecommunications, optical clocks, astrocombs, bio-sensing, and LiDAR. With the advent of inverse…
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field…
Flexible transparent electrodes, encompassing the combination of optical transparency and electrical conductivity, empower numerous optoelectronic applications. While the main efforts nowadays concentrate on developing wire meshes and…
Directional transport properties at the nanoscale remain a challenge primarily due to issues associated with control over the underlying anisotropy and scalability to macroscopic scales. In this letter, we develop a facile approach based on…
Photoconductors based on semiconducting thin films, nanowires and 2-dimensional atomic layers have been extensively investigated. But there is no explicit photogain equation that allows for fitting and designing photoresponses of these…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
Photoelectric properties of metamaterials containing non-centrosymmetric, similarly oriented metallic nanoparticles embedded in a homogeneous semiconductor matrix are theoretically studied. Due to the asymmetric shape of the nanoparticle…