相关论文: Polar Rectification Effect in Electro-Fatigued SrT…
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic…
Rectification, the conversion of AC fields into DC currents, is crucial for optoelectronic applications such as energy harvesting and wireless communication. However, it is conventionally absent in centrosymmetric systems due to vanishing…
Ferroelectric materials offer unprecedented ultrafast responses and are of great interest for the development of new polarizable media under the influence of an electromagnetic field. Recent research efforts have demonstrated the role of…
Electrical current rectification is an interesting electronic feature, popularly known as a diode. Achieving a high rectification ratio in a molecular junction has been a long-standing goal in molecular electronics. The present work…
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer,…
Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO$_3$ thin films through low-energy He…
Full pattern Le-Bail refinement using x-ray powder diffraction profiles of Sr1-xCaxTiO3 for x=0.02, 0.04 in the temperature range 12 to 300 K reveals anomalies in the unit cell parameters at 170, 225 K due to an antiferrodistortive (cubic…
We theoretically study the coupling of electric charge and spin polarization in an equilibrium and nonequilibrium electric transport across a two dimensional Josephson configuration comprised of disordered surface channels of a three…
This report builds upon work introducing the concept of independent control over current and potential in electrocatalytic systems, as a means of improving control over their product selectivity. Previous work, describing an approach…
Oxide superlattices represent a potent avenue for tailoring emergent electronic phases through sophisticated interfacial charge transfer and dynamic lattice distortions. This study systematically investigates the structural and electronic…
Crystal surfaces are sensitive to the surrounding environment, where atoms left with broken bonds reconstruct to minimize surface energy. In many cases, the surface can exhibit chemical properties unique from the bulk. These differences are…
Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such…
Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite…
We investigate electronic thermal rectification in ferromagnetic insulator-based superconducting tunnel junctions. Ferromagnetic insulators coupled to superconductors are known to induce sizable spin splitting in the superconducting density…
We performed first principles calculations for epitaxially strained orthorhombic CaTiO$_3$. The computational results reveal the existence of a metastable ferroelectric phase at compressive strain with unexpected in-plane polarization.…
Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Electrostriction is an important material property that characterizes how strain changes with the development of polarization inside a material. We show that \textit{ab initio }techniques developed in recent years can be exploited to…