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相关论文: Exciton g-factors of van der Waals heterostructure…

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We review the existing and present the new results of $\bf kp$ calculations of the electron, hole, and exciton effective $g$-factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for…

介观与纳米尺度物理 · 物理学 2020-11-24 M. A. Semina , A. A. Golovatenko , A. V. Rodina

Interlayer excitons in van der Waals heterostructures offer rich collective phases, prospective optoelectronic applications, and versatile tunability, where control by electronic means is particularly relevant and practical. Here, in the…

介观与纳米尺度物理 · 物理学 2025-02-20 Cem Sevik , Engin Torun , Milorad V. Milosevic , Fulvio Paleari

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be…

介观与纳米尺度物理 · 物理学 2018-04-24 Simon Ovesen , Samuel Brem , Christopher Linderälv , Mikael Kuisma , Paul Erhart , Malte Selig , Ermin Malic

Collective excitations of bound electron-hole pairs -- known as excitons -- are ubiquitous in condensed matter, emerging in systems as diverse as band semiconductors, molecular crystals, and proteins. Recently, their existence in strongly…

Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal…

Van der Waals heterostructures made from atomically thin transition metal dichalcogenides (TMD) and graphene have emerged as a building block for optoelectronic devices. Such systems are also uniquely poised to investigate interfacial…

Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to…

This paper presents a theoretical description of both the valley Zeeman effect (g-factors) and Landau levels in two-dimensional H-phase transition metal dichalcogenides (TMDs) using the Luttinger-Kohn approximation with spin-orbit coupling.…

材料科学 · 物理学 2020-08-26 Fengyuan Xuan , Su Ying Quek

Optical excitation serves as a powerful approach to control the electronic structure of layered Van der Waals materials via many-body screening effects, induced by photoexcited free carriers, or via light-driven coherence, such as optical…

Stacking monolayers of transition metal dichalcogenides into a heterostructure with a finite twist-angle gives rise to artificial moir\'e superlattices with a tunable periodicity. As a consequence, excitons experience a periodic potential,…

介观与纳米尺度物理 · 物理学 2020-12-30 Samuel Brem , Christopher Linderälv , Paul Erhart , Ermin Malic

Excitons in monolayer semiconductors have large optical transition dipole for strong coupling with light field. Interlayer excitons in heterobilayers, with layer separation of electron and hole components, feature large electric dipole that…

介观与纳米尺度物理 · 物理学 2019-03-07 Wei-Ting Hsu , Bo-Han Lin , Li-Syuan Lu , Ming-Hao Lee , Ming-Wen Chu , Lain-Jong Li , Wang Yao , Wen-Hao Chang , Chih-Kang Shih

Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a…

Excitons in atomically-thin semiconductors necessarily lie close to a surface, and therefore their properties are expected to be strongly influenced by the surrounding dielectric environment. However, systematic studies exploring this role…

介观与纳米尺度物理 · 物理学 2016-12-06 Andreas V. Stier , Nathan P. Wilson , Genevieve Clark , Xiaodong Xu , Scott A. Crooker

Van der Waals heterostructures formed by stacking two-dimensional atomic crystals are a unique platform for exploring new phenomena and functionalities. Interlayer excitons, bound states of spatially separated electron-hole pairs in van der…

材料科学 · 物理学 2018-02-14 Zefang Wang , Yi-Hsin Chiu , Kevin Honz , Kin Fai Mak , Jie Shan

We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning…

We revisit low-temperature optical spectra of transition-metal dichalcogenide monolayers and point to a possible crystallization of electrons (or holes) at low to moderate charge densities. To calculate the excitonic spectra under such…

介观与纳米尺度物理 · 物理学 2023-08-16 Dinh Van Tuan , Hanan Dery

Moir\'e potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However,…

We propose a straightforward and highly accurate method for extracting material parameters such as screening length, bandgap energy, exciton reduced mass, and the dielectric constant of the surrounding medium from experimental…

介观与纳米尺度物理 · 物理学 2025-10-03 Duy-Nhat Ly , Dai-Nam Le , Dang-Khoa D. Le , Van-Hoang Le

Van der Waals heterostructures of two-dimensional transition metal dichalcogenides provide a unique platform to engineer optoelectronic devices tuning their optical properties via stacking, twisting, or straining. Using ab initio Many-Body…

介观与纳米尺度物理 · 物理学 2025-03-21 R. Reho , A. R. Botello-Méndez , D. Sangalli , M. J. Verstraete , Zeila Zanolli

Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional…