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Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in…
The search of new topological insulators that demonstrate the quantum anomalous Hall effect (QAHE) is a cutting-edge research topic in condensed matter physics and materials science. So far, the QAHE has been observed only in Cr-doped…
We study the possibility of realizing quantum anomalous Hall effect (QAHE) with tunable Chern number through doping magnetic elements in the multi-layer topological insulator film. We find that high Chern number QAHE phases exist in the…
Electrons in topological flat bands can form novel topological states driven by the correlation effects. The penta-layer rhombohedral graphene/hBN moire superlattice has been shown to host fractional quantum anomalous Hall effect (FQAHE) at…
The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However,…
Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$,…
As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle…
Recently, the quantum anomalous Hall effect (QAHE) has been theoretically proposed in compensated antiferromagnetic systems by using the magnetic topological insulator model [see arXiv:2404.13305 (2024)]. However, the related and systematic…
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…
A quantum phase transition arises from competition between different ground states and is typically accessed by varying a single physical parameter near absolute zero temperature. The quantum anomalous Hall (QAH) effect with high Chern…
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic…
Two-dimensional Chern insulators have emerged as crucial platforms for the realization of the quantum anomalous Hall effect, and as such have attracted significant interest in spintronics and topological quantum physics due to their unique…
We investigate a new class of topological antiferromagnetic (AF) Chern insulators driven by electronic interactions in two-dimensional systems without inversion symmetry. Despite the absence of a net magnetization, AF Chern insulators…
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electronic/spintronic applications. The biggest hurdle for the…
The quantum anomalous Hall state with a large band gap and a high Chern number is significant for practical applications in spintronics. By performing first-principles calculations, we investigate electronic properties of the fully…
Based on density functional theory (DFT) calculations, we predict that a monolayer of OsCl$_3$---a layered material whose interlayer coupling is weaker than in graphite---possesses a quantum anomalous Hall (QAH) insulating phase generated…
The high Chern-number quantum anomalous Hall effect (QAHE) is significant and fascinating due to the presence of multiple dissipationless chiral edge states. Here, we predict that monolayer NiSbO3 possesses the Chern number C = 3, confirmed…
The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility.…
An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption…
Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes…