相关论文: Strain Induced Relaxor-type Ferroelectricity Near …

VO2 is well known for its dual phase transitions; electrical as well as structural, at a single temperature of 340K. The low temperature structural phases of VO2 are different from its high temperature counterpart by means of structural…

We have prepared the complete delafossite solid solution series between diamagnetic CuAlO2 and the t2g^3 frustrated antiferromagnet CuCrO2. The evolution with composition x in CuAl(1-x)Cr(x)O2 of the crystal structure and magnetic…

We report a detailed magnetic, dielectric and Raman studies on partially disordered and biphasic double perovskite La2NiMnO6. DC and AC magnetic susceptibility measurements show two magnetic anomalies at TC1 ~ 270 K and TC2 ~ 240 K, which…

In this paper the synthesis and study of the structural, morphological, electrical, magnetic and electronic properties of the LaBiFe2O6 novel material are reported. The material was produced using the standard ceramic method. The Rietveld…

In the present work the authors report results of broadband dielectric spectroscopy on various samples of CaCu3Ti4O12, including so far only rarely investigated single crystalline material. The measurements extend up to 1.3 GHz, covering…

The structural phase transition in hexagonal BaMnO$_3$ occurring at $T_c$=130 K was studied in ceramic samples using electron and X-ray diffraction, second harmonic generation as well as by dielectric and lattice dynamic spectroscopies. The…

The molecular compound (NH4)2[FeCl5(H2O)] is a type-II multiferroic material, in which incommensurate cycloidal order directly induces ferroelectric polarization. The multiferroic domain kinetics in (NH4)2[FeCl5(H2O)] were studied by…

Dielectric, anelastic and ^139La NMR relaxation measurements have been made on the relaxor ferroelectric Pb(1-3x/2)La(x)Zr(0.2)Ti(0.8)O(3) (PLZT) with x = 0.22. The dielectric susceptibility exihibits the frequency dispersive maximum due to…

The layered cuprate Bi$_{2}$CuO$_{4}$ is investigated using magnetic, dielectric and pyroelectric measurements. This system is observed to be an improper multiferroic, with a robust ferroelectric state being established near the magnetic…

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at…

Ferroelectric domain structure evolution induced by an external electric field was investigated by means of nematic liquid crystal (NLC) method in two strontium-barium niobate single crystals of nominal composition:…

In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects.…

Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between…

Dielectric study over a broadband was carried out from 10 to 70 K on ceramic Gd1-xYxMnO3 (x= 0.2, 0.3, and 0.4). For all the compositions, a prominent sharp peak about ~18K was observed in the temperature dependence of both {\epsilon}'(T)…

We performed first principles calculations for epitaxially strained orthorhombic CaTiO$_3$. The computational results reveal the existence of a metastable ferroelectric phase at compressive strain with unexpected in-plane polarization.…

Recently, a new orthorhombic phase has been discovered in the ferroelectric system Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-xPT) for x= 9%, and for x= 8% after the application of an electric field. In the present work, synchrotron x-ray measurements…

We have performed dielectric measurements and neutron diffraction experiments on the double perovskite In2NiMnO6. A ferroelectric polarization, P ~ 30 {\mu}C/m2, is observed in a polycrystalline sample below TN = 26 K where a magnetic phase…

Epitaxial thin films of relaxor PbMg1/3Nb2/3O3 and PbSc0.5Nb0.5O3, and ferroelectric PbZr0.65Ti0.35O3, Pb0.955La0.045Zr0.65Ti0.35O3, and Ba0.4Sr0.6TiO3 were prepared, and their dielectric properties were studied in a broad range of the…

(1-x)Li0.12Na0.88NbO3-xBaTiO3 (0 to x to 0.40) ferroelectric ceramics were prepared using conventional ceramics route and their phase transitional behavior is investigated by using dielectric spectroscopy. The temperature-dependent…

HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible root-cause of the astonishing ferroelectricity, which has…