相关论文: Nanostructured germanium with >99 % absorption at …
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
Miniaturized spectrometers hold great promise for in situ, in vitro, and even in vivo sensing applications. However, their size reduction imposes vital performance constraints in meeting the rigorous demands of spectroscopy, including fine…
With the advent of high-precision nanoscale lithography technology, high-resolution image sensing has experienced rapid development in recent years. Currently, mainstream commercial image sensors predominantly utilize Bayer array color…
We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated…
In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency…
Biosensing based on optically trapped fluorescent nanodiamonds potentially allows to resolve biochemical processes inside living cells at a desired intracellular location. Towards this goal, we investigate near infrared (NIR) laser…
We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector operating in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) domains consisting of a hybrid heterostructure made of nanopatterned graphene…
Most integrated evanescent-field photonic sensors measure changes in either the real part or the imaginary part of the complex refractive index of the sample, i.e., refraction or absorption. Here we propose and experimentally demonstrate a…
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon…
Infrared (IR) dyes, especially those within the near-infrared (NIR) spectrum, offer substantial advantages for in vivo imaging, owing to their deep tissue penetration and minimal background autofluorescence. Nanoparticles incorporating…
We show that a perfect absorber/thermal emitter exhibiting an absorption peak of 99.9% can be achieved in metallic nanostructures that can be easily fabricated. The very high absorption is maintained for large angles with a minimal shift in…
Nanocrystalline Si and Ge are of high interest for integrated Si photonics related to light emission, optical sensors, photodetectors, solar energy harvesting and conversion devices, and also for floating gate non-volatile memories (NVMs).…
Nanoporous gold can be exploited as plasmonic material for enhanced spectroscopy both in the visible and in the near infrared spectral regions. In particular, with respect to bulk metal it presents interesting optical properties in the…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
The mid-infrared (mid-IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Ge-based photonic integrated circuits in this wavelength range have thus seen a…
Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques.…
Deterministic and versatile approaches to sample preparation on nanoscopic scales are important in many fields including photonics, electronics, biology and material science. However, challenges exist in meeting many nanostructuring…
We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by…
The longwave infrared (LWIR) region of the spectrum spans 8 to 14 {\mu}m and enables high-performance sensing and imaging for detection, ranging, and monitoring. Chip-scale integrated LWIR photonics has enormous potential for real-time…
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to…