相关论文: Strain-mediated Symmetry Breaking Switch with Perp…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
Heavy metal/ferromagnetic layers with perpendicular magnetic anisotropy (PMA) have potential applications for high-density information storage in racetrack memories and nonvolatile magnetic random access memories. Writing and erasing of…
It is of considerable technological importance to achieve an electrical control of magnetism of sufficient magnitude. To overcome the in-plane shape anisotropy, needed is the electrical control of a perpendicular magnetic anisotropy (PMA).…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using…
Parametric oscillation occurs when the resonance frequency of an oscillator is periodically modulated. Owing to time-reversal symmetry breaking in magnets, nonreciprocal magnons can be parametrically excited when spatial-inversion symmetry…
Net-zero-magnetization magnets have garnered intensive research attention due to their ultradense and ultrafast potential. In terms of the symmetric classification of connecting magnetic atoms with opposite spin polarization, the…
Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
The asymmetric magnetization reversal is studied in a single exchange-biased microbar of 1.5 x 13 micrometer with anisotropic magnetoresistance and magnetic force microscopy. The particle has a moment of less than 10^-9 emu and is not…
A first principles study is conducted to explore the changes in the magnetic structure of Mn\textsubscript{3}GaN under anisotropic biaxial strain. Mn\textsubscript{3}GaN is an antiperovskite with a structure similar to that of an ideal…
Perpendicular magnetic anisotropy was found to be highly sensitive to the nominal thickness and morphology of laterally heterogeneous CoPd films in the vicinity of the metal insulator transition. We used the effect to tune the anisotropy by…
We report on magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi-YIG) thin films and mesoscale patterned structures deposited on a PMN-PT substrate with the application of voltage-induced strain. The Bi content is…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…
The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials for tuning magnetic properties to the desired level. Here,…
Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast developing research field. This is mainly due to the perspective of energy…
Perpendicular magnetic anisotropy (PMA) and low magnetic damping are the key factors for the free layer magnetization switching by spin transfer torque technique in magnetic tunnel junction devices. The magnetization precessional dynamics…
The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the…
We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co(t_Co nm)/Ni(t_Ni nm)]5/Pt(1 nm) multilayers by…
The dynamic process of assisted magnetic switchins has been simulated to investigate the associated physics. The model uses a Voronoi construction to determine the physical structure of the nano granular thin film recording media; and the…