相关论文: Atomic Origin of Spin-Valve Magnetoresistance at t…
The unusual magnetoresistance (MR) behavior in Sr2FeMoO6, recently termed as spin-valve type MR (SVMR), presents several anomalies that are little understood so far. The difficulty in probing the origin of this phenomenon, arising from the…
The laminar perovskite Ca3Ru2O7 naturally forms ferromagnetic double-layers of alternating moment directions, as in the spin-valve superlattices. The mechanism of huge magnetoresistive effect in the material has been controversial due to a…
We theoretically study the transport properties of a supramolecular spin valve, consisting of a carbon nanotube with two attached magnetic molecules, weakly coupled to metallic contacts. The emphasis is put on analyzing the change of the…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers.…
SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic…
Grain boundaries, the two-dimensional (2D) defects between differently oriented crystals, control mechanical and transport properties of materials. Our fundamental understanding of grain boundaries is still incomplete even after nearly a…
We report detailed magnetization ($M$) and magnetoresistance ($MR$) studies on a series of Sr$_2$FeMoO$_6$ samples with independent control on anti-site defect and grain boundary densities. These results, exhibiting a switching-like…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
Magnetic anisotropy in complex oxides often originates from the complex interplay of several factors, including crystal structure, spin-orbit coupling, and electronic interactions. Recent studies on Ru-substituted $La_{0.70}Sr_{0.30}MnO_3$…
We present magnetoresistance and Hall-effect measurements on single crystal magnetite Fe3O4 close to the Verwey transition Tv = 123.8 K. We show that the formation of grain boundaries accompanying the reduction in crystal symmetry plays a…
Several experimental studies have referred to the grain boundary (GB) defect as the origin of the ferromagnetism in ZnO. However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and…
The resistivity as a function of temperature, magnetic field and its orientation for atomically flat SrTiO3\LaAlO3 interfaces with carrier densities of ~3*10^13 cm^-2 is reported. At low magnetic fields superconductivity is observed below…
The magnetoresistance as a function of temperature and field for atomically flat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported. Anomalous anisotropic behavior of the magnetoresistance is observed below 30 K for…
We have studied the magnetic behavior of dextran-coated magnetite (Fe$_3$O$_4$) nanoparticles with median particle size $\left<d\right>=8$ $nm$. Magnetization curves and in-field M\"ossbauer spectroscopy measurements showed that the…
In the recent experiments the unusual oscillatory magnetoresistance in superconductors was discovered with a periodicity essentially independent on magnetic field direction and even material parameters. The nearly universal period points to…
The electronic and magnetic properties of SrFeO$_{3-\delta}$ single crystals with controlled oxygen content ($0 \leq \delta \leq 0.19$) have been studied systematically by susceptibility, transport and spectroscopic techniques. An intimate…
Naturally occurring spin-valve-type magnetoresistance (SVMR), recently observed in Sr2FeMoO6 samples, suggests the possibility of decoupling the maximal resistance from the coercivity of the sample. Here we present the evidence that SVMR…
Atomic migration from metallic contacts, and subsequent filament formation, is recognised as a prevailing mechanism leading to resistive switching in memristors based on two-dimensional materials (2DMs). This study presents a detailed…
Measurements of the static magnetic susceptibility and of the nuclear magnetic resonance of multiwalled vanadium-oxide nanotubes are reported. In this nanoscale magnet the structural low-dimensionality and mixed valency of vanadium ions…