相关论文: Spin-orbit torque based physical unclonable functi…

Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…

We unveil novel spin-orbit torque mechanisms driven by topological edge states in magnetic graphene-based devices. Within the energy gap, a damping-like torque plateau emerges within the quantum anomalous Hall phase upon breaking…

Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…

Recent discovery of spin-orbit torques (SOTs) within magnetic single-layers has attracted attention in the field of spintronics. However, it has remained elusive as to how to understand and how to tune the SOTs. Here, utilizing the single…

Current-induced domain wall (DW) motion has drawn great attention in the last decades as the key operational principle of emerging magnetic memory devices. As the major driving force of the current-induced DW motion, the spin-orbit torque…

The concept of quantum memory plays an incisive role in the quantum information theory. As confirmed by several recent rigorous mathematical studies, the quantum memory inmate in the bipartite system $\rho_{AB}$ can reduce uncertainty about…

Spin-orbit torque (SOT) has been extensively studied as a key mechanism in spintronics applications. However, conventional SOT materials limit the spin polarization direction to the in-plane orientation, which is suboptimal for efficient…

We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…

For deterministic magnetization switching by spin-orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential for deterministic switching by breaking the magnetization…

Artificial modulation of a neuronal subset through ion channels activation can initiate firing patterns of an entire neural circuit in vivo. As nanovalves in the cell membrane, voltage-gated ion channels can be artificially controlled by…

Knots, characterized by topological invariants called the Hopf number $H$, arise from the intertwining of strings and exhibit diverse configurations. The knot structures have recently been observed in condensed matters, as examplified by a…

Electrical switching of magnetization via spin-orbit torque (SOT) is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate…

Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…

Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy…

Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the…

Spintronic artificial neurons are intriguing building blocks for energy efficient Neuromorphic Computing (NC). Nevertheless, most contemporary implementations rely on symmetry breaking external in plane magnetic fields (H_X) for neuron…

Strong physical unclonable functions (PUFs) provide a low-cost authentication primitive for resource constrained devices. However, most strong PUF architectures can be modeled through learning algorithms with a limited number of CRPs. In…

Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…

Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied,…

Spin-orbit torque (SOT) refers to the excitation of magnetization dynamics via spin-orbit coupling under the application of a charged current. In this work, we introduce a simple and intuitive description of the SOT in terms of spin force.…