相关论文: Planar Hall driven torque in a FM/NM/FM system

Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology. Apart from conventional collinear spin materials…

The topological insulator/ferromagnetic metal (TI/FMM) bilayer thin films emerged as promising topological surface state-based spintronic devices, most notably in their efficiency of current-induced spin torque. Using a cubic lattice model,…

Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely…

We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is…

A theoretical framework is proposed for the spin-current driven synchronized self-oscillations in ferromagnets in the spin Hall geometry. The spin current generated by the spin Hall effect in a bottom nonmagnetic heavy metal excites a…

There has been considerable interest in spin-orbit torques for the purpose of manipulating the magnetization of ferromagnetic (FM) films or nano-elements for spintronic technologies. Spin-orbit torques are derived from spin currents created…

We study spin textures in a quantum Hall Ising ferromagnet. Domain walls between ferro and unpolarized states at $\nu=2$ are analyzed with a functional theory supported by a microscopic calculation. In a neutral wall, Hartree repulsion…

Spin and electric Hall currents are calculated numerically in a two-dimensional mesoscopic system with Rashba and Dresselhaus spin-orbit coupling by means of the Landauer-Buttiker formalism. It is found that both electric and spin Hall…

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced…

Motivated by recent experiments, we investigate the quantum spin Hall state in 2D topological insulator/ferromagnetic metal planar junctions by means of a tight-binding model and linear response theory. We demonstrate that whether the edge…

Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…

Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to…

We report a giant spin Hall effect (SHE) in {\beta}-W thin films. Using spin torque induced ferromagnetic resonance with a {\beta}-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |\theta|=0.30\pm0.02, large enough for an…

Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins…

The theoretical investigation on magnetization dynamics excited by the spin Hall effect in metallic multilayers having two ferromagnets is discussed. The relaxation of the transverse spin in one ferromagnet enables us to manipulate the…

A possibility to excite a stable self-oscillation in a perpendicularly magnetized ferromagnet by the spin Hall effect is investigated theoretically. It had been shown that such self-oscillation cannot be stabilized solely by the direct spin…

It is proposed that when a charge current circulates in a paramagnetic metal a transverse spin imbalance will be generated, giving rise to a 'spin Hall voltage'. Similarly, that when a spin current circulates a transverse charge imbalance…

Spin Hall Effect is relativistic quantum mechanical effect which enables non-magnetic materials show magnetic phenomena without the application of a magnetic field. With spin Hall Effect, one can realize spintronics devices operating purely…

When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…

We used micromagnetic simulations to investigate the spatial distributions of the effective magnetic fields induced by spin chirality in crossed nanowires with three characteristic magnetic structures: a radiated-shape, an antivortex, and a…