相关论文: Atomic-environment-dependent thickness of ferroela…

Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is…

The Landau theory of 180 degrees domain walls in BaTiO3 type ferroelectric particles is presented. Results of exact description of domain walls in bulk enabled us to formulate variational approach to theory of domain walls in corresponding…

We have used the results of micromagnetic simulations to investigate the effects of nanowire geometry and domain wall magnetization structure on the characteristic parameters of magnetic atom traps formed by domain walls in planar…

In this paper we describe domain walls appearing in a thin, nematic liquid crystal sample subject to an external field with intensity close to the Fr\'eedericksz transition threshold. Using the gradient theory of the phase transition…

X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile.…

First-principles calculations for pristine neutral ferroelectric domain walls in BiFeO$_3$ reveal that excess electrons are selectively trapped by the domain walls, while holes are only weakly attracted. Such trapped excess electrons may be…

Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric…

We study how the ferroelastic domain structure sets in in an epitaxial film of a material with second order proper ferroelastic transition. The domain structures considered are similar to either $a_{1}/a_{2}/a_{1}/a_{2}$ or $c/a/c/a$…

We studied the ferroelectric and ferromagnetic properties of compressive strained and unstrained BiMnO3 thin films grown by rf-magnetron sputtering. BiMnO3 samples exhibit a 2D cube-on-cube growth mode and a pseudo-cubic struc-ture up to a…

The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging…

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric…

The origin of the unusual 90^o ferroelectric / ferroelastic domains, consistently observed in recent studies on meso and nanoscale free-standing single crystals of BaTiO3 [Schilling et al., Physical Review B, 74, 024115 (2006); Schilling et…

Analytical description of domain structure morphology and phase diagrams of ferroelectric nanoparticles is developed in the framework of Landau Ginzburg Devonshire approach. To model realistic conditions of incomplete screening of…

Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical…

Polarization switching mechanisms in ferroelectric materials are fundamentally linked to local domain structure and presence of the structural defects, which both can act as nucleation and pinning centers and create local electrostatic and…

Domain structures of 320 nm thin epitaxial films of ferroelectric PbTiO3 grown by MOCVD technique in identical conditions on SmScO3 and TbScO3 perovskite sub- strates have been investigated by Raman spectroscopy and piezoresponse force…

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

Dynamics of magnetization domain walls (DWs) in thin ferromagnetic nanotubes subject to longitudinal external fields is addressed analytically in the regimes of strong and weak penalization. Explicit functional forms of the DW profiles and…

Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a…

Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735C, with the effective roughness exponent \zeta\ changing from…