相关论文: BAlGaN alloys nearly lattice-matched to AlN for ef…

In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet…

High-energy-resolution GaN $\alpha$-particle detectors have significant potential for space radiation, nuclear instrumentation, and harsh-environment applications. However, existing GaN $\alpha$-particle detectors still face several key…

The Mg2X (X=Si, Ge, Sn) based alloy is an eco-friendly thermoelectric material for mid-temperature applications. The Mg2Si1-xSnx and Mg2Ge1-xSnx alloys can be phase-separated into Si(Ge)- and Sn-rich phases during material synthesis,…

In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and…

A nonlocal energy-balance equation is derived for the optical absorption, photoluminescence and inelastic electron-phonon scattering, which determines the electron and hole temperatures for any given lattice temperature. The evolution of…

Nanowire-based plasmonic lasers are now established as nano-sources of coherent radiation, appearing as suitable candidates for integration into next-generation nanophotonic circuitry. However, compared to their photonic counterparts, their…

The electronic properties of graphene may be changed from semimetallic to semiconducting by introducing perforations (antidots) in a periodic pattern. The properties of such graphene antidot lattices (GALs) have previously been studied…

With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a…

An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…

AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice…

Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…

Aluminum and their alloys, after careful treatments, can develop excellent mechanical, tribological, electrical and chemical (high corrosion resistance) properties. However, 7000 series, with Cu in the alloy, have a poor corrosion…

We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional…

We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration enabled the investigation of absorption spectroscopy in a gallium hollow…

Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Through combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically…

There is immense scientific interest in the properties of resonant thin films embroidered with periodic nanoscale features. This device class possesses considerable innovation potential. Accordingly, we report unpolarized broadband…

Series of GaN/AlN superlattices (SLs) with various periods and the same thicknesses of GaN quantum wells and AlN barriers have been investigated. X-ray diffraction, photoluminescence (PL) and transmission electron microscopy (TEM)…

We have studied the feasibility of electron conduction in azulene molecule and compared with that in its isomer naphthalene. We have used non-equilibrium Green's function formalism to measure the current in our systems as a response of the…

We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future…

High-order harmonics generation (HHG) is the only process that enables table-top-size sources of extreme-ultraviolet (XUV) light. The HHG process typically involves light interactions with gases or plasma-material phases that hinder wider…