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The ground-state structural and electronic properties of ferroelectric BiFeO$_3$ are calculated using density functional theory within the local spin-density approximation and the LSDA+U method. The crystal structure is computed to be…

材料科学 · 物理学 2007-05-23 J. B. Neaton , C. Ederer , U. V. Waghmare , N. A. Spaldin , K. M. Rabe

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

材料科学 · 物理学 2020-11-17 Vincent Garcia

The existence of ferroelectricity in {$\mathrm{BiMnO}_3$} has been a long-standing question for both experimentalists and theorists. In addition to a highly distorted bulk structure, the ionic crystal planes cause a large roughness in thin…

材料科学 · 物理学 2017-04-11 Yun-Peng Wang , J. N. Fry , Hai-Ping Cheng

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…

材料科学 · 物理学 2017-12-06 Ye Cao , Anna Morozovska , Sergei V. Kalinin

The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in…

材料科学 · 物理学 2025-12-17 Jiaheng Li , Quansheng Wu , Hongming Weng

Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for…

We use shear-mode Raman imaging to track ferroelectric switching in multilayer 3$R$-MoS$_2$. Within a single flake, mechanically segmented regions respond independently and follow distinct pathways. Partially polarized end states indicate…

材料科学 · 物理学 2026-05-21 Yulu Liu , Kenji Watanabe , Takashi Taniguchi , Xiaoxiang Xi

This paper reports on the temperature evolution of local elastic interactions between ferromagnetic CoFe films and ferroelectric BaTiO3 substrates. Polarization microscopy measurements indicate that growth-induced stripe domains in the CoFe…

材料科学 · 物理学 2014-01-17 Tuomas H. E. Lahtinen , Sebastiaan van Dijken

The influence of flexoelectric coupling on the internal structure of neutral domain walls in tetragonal phase of perovskite ferroelectrics is studied. The effect is shown to lower the symmetry of 180-degree walls which are oblique with…

材料科学 · 物理学 2015-06-05 P. V. Yudin , A. K. Tagantsev , E. A. Eliseev , A. N. Morozovska , N. Setter

Controlling the polarization switching in the ferroelectric nanocrystals, nanowires and nanodots has an inherent specificity related to the emergence of depolarization field that is associated with the spontaneous polarization. This field…

介观与纳米尺度物理 · 物理学 2015-10-06 Pierre-William Martelli , Séraphin M. Mefire , Igor Luk'yanchuk

Ferroelectricity-the switchable intrinsic electric polarization-has not yet been attained in a metal experimentally and is in fact generally deemed irreconcilable with free carriers, although polar metal has been achieved recently.…

Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions…

Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial…

We consider ferroelectric phase transitions in both short-circuited and biased ferroelectric-semiconductor films with a space (depletion) charge which leads to some unusual behavior. It is shown that in the presence of the charge the…

统计力学 · 物理学 2009-10-31 A. M. Bratkovsky , A. P. Levanyuk

Simultaneous imaging of the piezoresponse phase, amplitude and bare surface topography of displacive ferroelectric thin films by scanning probe microscopy directly shows the nature of domain wall pinning and its relation to morphological…

介观与纳米尺度物理 · 物理学 2010-01-05 S. Bhattacharya , M. J. Higgins

Recent observations of unusual ferroelectricity in thin films of HfO_2 and related materials have attracted broad interest to the materials and led to the emergence of a number of competing models for observed behaviors. Here we develop the…

材料科学 · 物理学 2018-11-27 Maya D. Glinchuk , Anna N. Morozovska , Yunseok Kim , Sergei V. Kalinin

Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale makes flexo-electric effects, especially in nanoscopic…

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions, an enhancement of the coercive field (exchange…

Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and…