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Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of…
The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission…
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly…
Diamond is generally considered to have high thermal conductivity, so little attention has been paid to the laser heating effects at low excitation power. However, defects during the growth process can result in a great degradation of…
The ultra-wide bandgap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are inactive at room temperature. Here, we present the effect of deep defects on the mechanical energy…
Nitrogen-vacancy (NV) centers in diamond are reliable single-photon emitters, with applications in quantum technologies and metrology. Two charge states are known for NV centers: NV$^0$ and NV$^-$, with the latter being mostly studied due…
The contactless temperature measurement at micro/nanoscale is vital to a broad range of fields in modern science and technology. The nitrogen vacancy (NV) center, a kind of diamond defect with unique spin-dependent photoluminescence, has…
Frequency references based on solid state spins promise simplicity, compactness, robustness, multifunctionality, ease of integration, and high densities of emitters. Nitrogen-vacancy (NV) centers in diamond are a natural candidate, but the…
Quantum sensors based on Nitrogen Vacancy (NV) centers in diamond are highly capable of sensing multiple physical quantities. In this study, we use amplitude-modulated lock-in detection of optically detected magnetic resonance of NV…
Recently significant attention has been paid to magnetic-field-dependent photoluminescence (PL) features of the negatively charged nitrogen-vacancy (NV) centers in diamond. These features are used for microwave-free sensing and are…
Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for the development of optically pumped solid-state sensors such as magnetometers, thermometers or…
We explored the efficacy of lab-grown diamonds as potential target materials for the direct detection of sub-GeV dark matter~(DM) using metallic magnetic calorimeters~(MMCs). Diamond, with its excellent phononic properties and the low…
Optically active defect centers in diamond are of considerable interest, and ab initio calculations have provided valuable insight into the physics of these systems. Candidate structures for the Xe center in diamond, for which little…
Temperature-dependent nitrogen-vacancy (NV)-center relaxometry is an established tool to characterize paramagnetic molecules near to a sensing diamond, gaining momentum in different fields of science. However, recent results indicate that…
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence…
Tin-vacancy (SnV) color centers were created in diamond by ion implantation and subsequent high temperature annealing up to 2100 {\deg}C at 7.7 GPa. The first-principles calculation suggests that the large atom of tin can be incorporated…
Nitrogen incorporated ultrananocrystalline diamond ((N)UNCD) could be an enabling material platform for photocathode applications due to its high emissivity. While the quantum efficiency (QE) of UNCD was reported by many groups, no…
Here we describe model calculations to follow the spatio-temporal evolution of secondary electron cascades in diamond. The band structure of the insulator has been explicitly incorporated into the calculations as it affects ionizations from…
The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these…
The negatively charged nitrogen-vacancy centre is a unique defect in diamond that possesses properties highly suited to many applications, including quantum information processing, quantum metrology, and biolabelling. Although the unique…