相关论文: Hump-like structure in Hall signal from SrRuO$_3$ …

Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…

The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional…

We report on a systematic study of Hall effect using high quality single crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c. The residual resistivity ratio of 1330 and the large magnetoresistance of 1.5\times10^6 %…

We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more…

We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru…

The Hall coefficient $R_\mathrm{H}$ as a function of temperature for Pr$_{2-x}$Ce$_{x}$CuO$_{4}$ (PCCO) at $x = 0.17$ shows two sign changes between 0 and 300K that can be explained qualitatively using the two-carrier model. Using this…

Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of…

SrRuO$_3$ (SRO) films are known to exhibit insulating behavior as their thickness approaches four unit cells. We employ electron energy$-$loss (EEL) spectroscopy to probe the spatially resolved electronic structures of both insulating and…

Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled…

We investigate the optical properties of bi-isotropic materials under the anomalous Hall effect (AHE) of axion electrodynamics. Four refractive indices associated with circularly polarized waves are achieved, implying circular birefringence…

We report on combined resistance and magnetic measurements in a hybrid structure (HS) of randomly distributed anisotropic CoPt magnetic nanoparticles (MN) embedded in a 160 nm Nb thick film. Our resistance measurements exhibited a sharp…

The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin-orbit torques and…

We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The…

The kagome ferromagnet, Co-based shandite Co3Sn2S2, shows a large anomalous Hall effect (AHE) associated with the Weyl nodes. A thin film with a Co kagome monolayer was predicted to exhibit the quantum AHE, which awaits the experimental…

The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially…

Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for…

We report systematic measurements of anomalous Hall effect(AHE) and spin orbit torques(SOT) in MnGa/IrMn films,, in which a single MnGa epitaxial layer reveals obvious orbital two-channel Kondo (2CK) effect. As increasing the thickness of…

We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several…

The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO$_2$, subsequent experiments have…

The growth of SrRuO$_3$ (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial…