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相关论文: Current-Induced magnetization switching by the hig…

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The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel…

We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities obtained…

强关联电子 · 物理学 2009-11-13 H. Kontani , T. Tanaka , D. S. Hirashima , K. Yamada , J. Inoue

Electrical switching of magnetization via spin-orbit torque (SOT) is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate…

材料科学 · 物理学 2023-04-26 Xin Lin , Lijun Zhu

While moir\'e phenomena have been extensively studied in low-carrier-density systems such as graphene and semiconductors, their implications for metallic systems with large Fermi surfaces remain largely unexplored. Using GPU-accelerated…

介观与纳米尺度物理 · 物理学 2025-04-24 Ning Mao , Cheng Xu , Ting Bao , Nikolai Peshcherenko , Claudia Felser , Yang Zhang

It is generally believed that spin-orbit coupling (SOC) follows Z4 (atomic number) dependence and becomes significant only in heavy elements. Consequently, SOC in 3d transition metals should be negligible given their small Z. Using dynamic…

材料科学 · 物理学 2014-10-08 Chunhui Du , Hailong Wang , Fengyuan Yang , P. Chris Hammel

We observe that an in-plane magnetic field ($B_{||}$) can induce an order of magnitude enhancement in the low temperature ($T$) resistivity ($\rho$) of metallic 2D holes in a narrow (10nm) GaAs quantum well. Moreover, we show the first…

强关联电子 · 物理学 2009-11-11 X. P. A. Gao , G. S. Boebinger , A. P. Mills , A. P. Ramirez , L. N. Pfeiffer , K. W. West

Pure spin current has transfigured the energy-efficient spintronic devices and it has the salient characteristic of transport of the spin angular momentum. Spin pumping is a potent method to generate pure spin current and for its increased…

Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…

应用物理 · 物理学 2024-03-04 L. Chen , Y. Sun , S. Mankovsky , T. N. G. Meier , M. Kronseder , H. Ebert , D. Weiss , C. H. Back

We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching…

介观与纳米尺度物理 · 物理学 2015-06-18 O. J. Lee , L. Q. Liu , C. F. Pai , H. W. Tseng , Y. Li , D. C. Ralph , R. A. Buhrman

We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy,…

The manipulation of magnetization via Magnetic torques is one of the most important phenomena in spintronics. In thin films, conventionally, a charge current flowing in a heavy metal is used to generate transverse spin currents and to exert…

Using thin film pillars ~100 nm in diameter, containing two ferromagnetic Co layers of different thicknesses separated by a paramagnetic Cu spacer, we examine effects of torques due to spin-polarized currents flowing perpendicular to the…

介观与纳米尺度物理 · 物理学 2009-10-31 J. A. Katine , F. J. Albert , R. A. Buhrman , E. B. Myers , D. C. Ralph

Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the…

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an…

We investigated current-induced effective magnetic field Heff in half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by using the planar Hall effect. Applying in-plane current to the LSMO films exerted an in-plane…

材料科学 · 物理学 2017-04-21 Michihiko Yamanouchi , Tatsuro Oyamada , Takayoshi Katase , Hiromichi Ohta

High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect (SHE) highly limits to d-orbital materials associated with strong…

Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…

材料科学 · 物理学 2018-04-04 Yu Sheng , Kevin William Edmonds , Xingqiao Ma , Houzhi Zheng , Kaiyou Wang

We report an initial experimental survey of spin-Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic…

In transition metals and their compounds, the orbital degrees of freedom gives rise to an orbital current, in addition to the ordinary spin and charge currents. We reveal that considerably large spin and anomalous Hall effects (SHE and AHE)…

介观与纳米尺度物理 · 物理学 2009-11-13 H. Kontani , T. Tanaka , D. S. Hirashima , K. Yamada , J. Inoue

Magnetic trilayers having large perpendicular magnetic anisotropy (PMA) and high spin-orbit torques (SOTs) efficiency are the key to fabricate nonvolatile magnetic memory and logic devices. In this work, PMA and SOTs are systematically…

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