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We report scanning tunnelling microscopy and spectroscopy (STM/STS) studies on one and two unit cell (UC) high FeSe thin films grown on Bi$_2$Se$_3$(0001). In our thin films, we find the tetragonal phase of FeSe and dumb-bell shaped defects…

超导电性 · 物理学 2016-12-21 U. R. Singh , J. Warmuth , V. Markmann , J. Wiebe , R. Wiesendanger

We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission…

强关联电子 · 物理学 2015-09-01 Y. F. Nie , D. Di Sante , S. Chatterjee , P. D. C. King , M. Uchida , S. Ciuchi , D. G. Schlom , K. M. Shen

We used resonant elastic x-ray scattering at the Cu $L_3$ and Dy $M_5$ edges to investigate charge order in thin films of underdoped DyBa$_2$Cu$_3$O$_{6+x}$ (DyBCO) epitaxially grown on NdGaO$_3$ (110) substrates. The films show an…

We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray…

Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy…

We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies…

材料科学 · 物理学 2012-11-02 A. Gocalinska , M. Manganaro , D. D. VVedensky , E. Pelucchi

The presumably unconventional superconductor Beta-FeSe was deposited by radio frequency sputtering and molecular beam epitaxy (MBE) from two elementary sources. Superconducting thin films were grown in (001)-orientation on MgO(100) and…

超导电性 · 物理学 2015-05-12 Eike Venzmer , Alexander Kronenberg , Janek Maletz , Martin Jourdan

Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states…

材料科学 · 物理学 2024-06-19 Saadia Nasir , Walter J. Smith , Thomas E. Beechem , Stephanie Law

We report a detailed investigation of the first stages of the growth of self-organized Fe clusters on the reconstructed Au(111) surface by grazing incidence X-ray diffraction. Below one monolayer coverage, the Fe clusters are in "local…

材料科学 · 物理学 2009-11-10 H. Bulou , F. Scheurer , P. Ohresser , A. Barbier , S. Stanescu , C. Quiros

We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial…

材料科学 · 物理学 2012-05-23 R. Wicks , S. G. Altendorf , C. Caspers , H. Kierspel , R. Sutarto , L. H. Tjeng , A. Damascelli

We report molecular beam epitaxy growth of Sr-doped Bi$_2$Se$_3$ films on (111) BaF$_2$ substrate, aimed to realize unusual superconducting properties inherent to Sr$_x$Bi$_2$Se$_3$ single crystals. Despite wide range of the compositions,…

We report the first combined study of the low-energy electronic band structure of epitaxial Sr$_3$Ru$_2$O$_7$ films using angle-resolved photoemission spectroscopy and density functional theory. The complete Fermi-surface topography of the…

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data…

介观与纳米尺度物理 · 物理学 2014-04-10 A. A. Taskin , Fan Yang , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that…

材料科学 · 物理学 2021-07-23 R. O. M. Aboljadayel , A. Ionescu , O. J. Burton , G. Cheglakov , S. Hofmann , C. H. W. Barnes

In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy under various growth…

The subtle balance of electronic correlations, crystal field splitting and spin--orbit coupling in layered Ir$^{4+}$ oxides can give rise to novel electronic and magnetic phases. Experimental progress in this field relies on the synthesis…

材料科学 · 物理学 2018-08-20 A. Gutiérrez-Llorente , L. Iglesias , B. Rodríguez-González , F. Rivadulla

Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic…

材料科学 · 物理学 2023-10-18 Mingyu Yu , Lottie Murray , Matthew Doty , Stephanie Law

We report the controlled growth of single crystals of intercalated layered Lu$ _{1+n} $Fe$ _{2+n} $O$ _{4+3n-\delta} $ ($ n $=1,2) with different oxygen stoichiometries ${\delta}$. For the first time crystals sufficiently stoichiometric to…

强关联电子 · 物理学 2019-06-07 Sabreen Hammouda , Manuel Angst

By the first-principles electronic structure calculations, we have studied electronic structures of FeSe monolayer and bilayer thin films on SrTiO$_3$ (001) with SrO-termination or TiO$_2$ termination. We find that both FeSe monolayer and…

超导电性 · 物理学 2012-06-18 Kai Liu , Zhong-Yi LU , Tao Xiang

The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different…