相关论文: Interface moment dynamics and its contribution to …

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

We investigate the transient nonequilibrium dynamics of a molecular junction biased by a finite voltage and strongly coupled to internal vibrational degrees of freedom. Using two different, numerical exact techniques, diagrammatic Monte…

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…

We predict that the spin-transfer, $T_{i,||}$, and field-like, $T_{i,\bot}$, components of the {\it local} spin torque are dramatically enhanced in double-barrier magnetic tunnel junctions. The {\it spin-mixing} enhancement is due to the…

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…

Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…

Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…

A rich variety of physical effects in spin dynamics arises at the interface between different magnetic materials. Engineered systems with interlaced magnetic structures have been used to implement spin transistors, memories and other…

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…

We determine the interface tension for the 100, 110 and 111 interface of the simple cubic Ising model with nearest-neighbour interaction using novel simulation methods. To overcome the droplet/strip transition and the droplet nucleation…

Telegraph noise caused by frequent switching of the magnetization in small magnetic devices has become a useful resource for probabilistic computing. Conventional theories have been based on a linearization of the fluctuations at the…

Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…

We have fabricated oxide based spin filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin filter junctions. Until recently, spin filters have been largely comprised of…

A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the…

We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…

The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bias-dependence from experiments over large voltage ranges. We…

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…

Magneto-elastic (straintronic) switching of bistable magnetostrictive nanomagnets is an extremely energy-efficient switching methodology for (magnetic) binary switches that has recently attracted widespread attention because of its…

Recently there is considerable interest to realize efficient and low-cost true random number generators (RNGs) for practical applications. One important way is through the use of bistable magnetic tunnel junctions (MTJs). Here we study the…