相关论文: Predicting New Iron Garnet Thin Films with Perpend…
Tuning functional properties of thin caloric films by mechanical stress is currently of high interest. In particular, a controllable magnetisation or transition temperature is desired for improved usability in magnetocaloric devices. Here,…
Among the magnetostrictive alloys the one formed of iron and gallium (called "Galfenol" from its U.S. Office of Naval Research discoverers in the late 90's) is attractive for its low hysteresis, good tensile stress, good machinability and…
Yttrium Iron Garnet based tunable magnetostatic wave and spin wave devices are poised to revolutionize the fields of Magnonics, Spintronics, Microwave devices, and quantum information science. The magnetic bias required for operating and…
We report measurements on yttrium iron garnet (YIG) thin films grown on both gadolinium gallium garnet (GGG) and yttrium aluminium garnet (YAG) substrates, with and without thin Pt top layers. We provide three principal results: the…
We have achieved (001) oriented L10 (Fe1-xCux)55Pt45 thin films, with magnetic anisotropy up to 3.6x10^7 erg/cm^3, using atomic-scale multilayer sputtering and post annealing at 400 {\deg}C for 10 seconds. By fixing the Pt concentration,…
Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation,…
We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is…
Yttrium iron garnet (Y3Fe5O12, YIG) plays a significant role in the field of spintronics due to its low magnetic damping and insulating characteristics. However, most studies have focused on YIG in bulk form or as film grown on rigid…
Using density functional theory, we carried out systematic calculations for a series of ultrathin iron layers with thicknesses ranging from one atomic monolayer to eleven monolayers (up to about 1.5 nm). We considered three cases: (1) iron…
The anisotropic magnetoresistance (AMR) in thin permalloy strips was calculated at each steps during magnetization by the finite element method. The magnetization at equilibrium under different external fields was obtained by micromagnetic…
Perpendicular magnetic anisotropy was found to be highly sensitive to the nominal thickness and morphology of laterally heterogeneous CoPd films in the vicinity of the metal insulator transition. We used the effect to tune the anisotropy by…
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on…
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
Applications based on spin currents strongly profit from the control and reduction of their effective damping and their transport properties. We here experimentally observe magnon mediated transport of spin (angular) momentum through a 13.4…
Ferrimagnetic Mn$_2$Fe$_x$Ga $(0.26 \leq x \leq 1.12)$ thin films have been characterised by X-ray diffraction, SQUID magnetometry, X-ray absorption spectroscopy, X-ray magnetic circular dichroism and M\"{o}ssbauer spectroscopy with the aim…
Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic…
Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
Iron gallium (FeGa) alloys are excellent rare-earth-free magnetostrictors. Through epitaxial stabilization, the disordered A2 alloy can be extended from 19% to 30% gallium resulting in a magnetostrictive coefficient almost twice than that…
An electric method for measuring magnetic anisotropy in antiferromagnetic insulators (AFIs) is proposed. When a metallic film with strong spin-orbit interactions, e.g., platinum (Pt), is deposited on an AFI, its resistance should be…