相关论文: CMOS-compatible titanium nitride for on-chip plasm…
A current approach to depositing highly plasmonic titanium nitride films using the magnetron sputtering technique assumes that the process is performed at temperatures high enough to ensure the atoms have sufficient diffusivities to form…
While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For…
Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
This work reports a pulsed laser-assisted synthesis, detailed structural characterization, and study of plasmonic properties of three sets of TiN/TiNO thin films with high electron density. The first two sets of TiN films were grown at 600C…
On-chip photodetectors are essential components in optical communications as they convert light into an electrical signal. Photobolometers are type of photodetector that functions through a resistance change caused by electronic temperature…
Although transition-metal nitrides have been widely applied for several decades, experimental investigations of their high-resolution electronic band structures are rare due to the lack of high-quality single-crystalline samples. Here, we…
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic…
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile…
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector…
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth of thick, high quality GeSn limit the device absorber…
We discuss the design and measured performance of a titanium nitride (TiN) mesh absorber we are developing for controlling optical crosstalk in horn-coupled lumped-element kinetic inductance detector arrays for millimeter-wavelengths. This…
Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and…
To use highly resistive material for Kinetic Inductance Detectors (KID), new designs have to be done, in part due to the impedance match needed between the KID chip and the whole 50 ohms readout circuit. Chips from two new hybrid designs,…
We present a guide for the design and fabrication of a CMOS-compatible metamaterial microstructure as an absorber of visible light with exceptionally high absorption efficiency (~ 98%), for wavelengths 400nm-700nm. The structural parameters…
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic…
Hyperbolic superlattices are used for sub-wavelength focusing, cloaking, and optical thermal management. Typically, these superlattices are constructed of layers of noble metals and insulators. Despite these systems displaying excellent…
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon…