相关论文: Atomically Engineered Hf0.5Zr0.5O2 Integrated Nano…
Compact, low-power analog RF components are essential for next-generation microwave electronics and wireless systems. We demonstrate an all-electric integrated piezo-magnonic microelectromechanical system that enables efficient voltage…
Phase separation of metallic and antiferromagnetic (AFM) insulating phases in alkaline iron selenides (AxFe2-ySe2) continues to attract intense interest because the relationship between two peculiar features probably is a key to clarifying…
Engineering nano-mechanical quantum systems possessing ultra-long motional coherence times allow for applications in ultra-sensitive quantum sensing, motional quantum memories and motional interfaces between other carriers of quantum…
Placing a nanomechanical object in the evanescent near-field of a high-$Q$ optical microcavity gives access to strong gradient forces and quantum-noise-limited displacement readout, offering an attractive platform for precision sensing…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…
Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical…
RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a…
Ferrimagnetic semiconductors, integrated with net magnetization, antiferromagnetic coupling and semi-conductivity, have constructed an ideal platform for spintronics. For practical applications, achieving high N$\acute{e}$el temperatures…
This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
We predict that conduction electrons in a semiconductor film containing a centered square array of metal nanowires normal to its plane are bound in quantum states around the central wires, if a positive bias voltage is applied between the…
The comprehensive search for multifunctional materials has resulted in the discovery of semiconductors and oxides showing ferromagnetic features persisting to room temperature. In this tutorial review the methods of synthesis of these…
Nanomechanical resonators driven by multifrequency signals combine the physics of mesoscopic vibrations and the technologies of radio communication. Their simplest property stems from their resonant response: they behave as filters,…
Transition metal aluminum nitrides are a technologically important class of multifunctional ceramics, however, the HfAlN system remains largely unexplored. We investigate phase stability, nanostructure design, and mechanical behavior of…
Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical…
The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron…
Nanomagnetic oscillator is a key component for radio-frequency (RF) signal generation in many nano-scale spintronic devices. However, the actuation mechanisms of nanomagnetic oscillators are mostly current-based, which is energy inefficient…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
Resolving growth mechanisms and thickness evolution of functional properties is one of the key tasks in materials discovery and optimization involving thin-film materials, traditionally requiring significant experimental budgets. Here we…
In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick…