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Monolayer MoS$_2$ is a direct band gap semiconductor with potential applications in optoelectronics and photonics. MoS$_2$ also has a large optical nonlinearity. However, the atomic thickness of the monolayer limits the strength of the…

The integration of light and materials technology is key to the creation of innovative sensing technologies. Sensing of electric and magnetic fields, and temperature with high spatio-temporal resolution is a critical task for the…

Microscopic studies on thin film superconductors play an important role for probing non-equilibrium phase transitions and revealing dynamics at the nanoscale. However, magnetic sensors with nanometer scale spatial and picosecond temporal…

超导电性 · 物理学 2021-02-03 D. Paone , D. Pinto , G. Kim , L. Feng , M-J. Kim , R. Stöhr , A. Singha , S. Kaiser , G. Logvenov , B. Keimer , J. Wrachtrup , K. Kern

The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built…

介观与纳米尺度物理 · 物理学 2017-05-05 Christoph Reuter , Riccardo Frisenda , Der-Yuh Lin , Tsung-Shine Ko , David Perez de Lara , Andres Castellanos-Gomez

Charge transport in nanostructures and thin films is fundamental to many phenomena and processes in science and technology, ranging from quantum effects and electronic correlations in mesoscopic physics, to integrated charge- or spin-based…

介观与纳米尺度物理 · 物理学 2017-04-24 K. Chang , A. Eichler , C. L. Degen

Magnetic imaging with nitrogen-vacancy centers in diamond, also known as quantum diamond microscopy, has emerged as a useful technique for the spatial mapping of charge currents in solid-state devices. In this work, we investigate an…

The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with…

强关联电子 · 物理学 2012-09-06 T. Serkan Kasirga , Dong Sun , Jae H. Park , Jim M. Coy , Zaiyao Fei , Xiaodong Xu , David H. Cobden

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport…

Resistive transport near a superconducting phase can arise from the motion of normal-state quasiparticles or that of vortices. The conductivity alone does not distinguish between these mechanisms. We propose an unambiguous method for…

超导电性 · 物理学 2026-05-20 Yifan F. Zhang , Rhine Samajdar , Sarang Gopalakrishnan

While photoelectric detection of magnetic resonance (PDMR) can be applied to miniaturize nitrogen-vacancy (NV) center-based quantum sensors, real demonstration of PDMR-based magnetic field sensing remains as a distinctive challenge. To…

量子物理 · 物理学 2026-02-13 Xuan-Ming Shen , Qilong Wu , Huihui Yu , Pei-Nan Ni , Qing Lou , Chao-Nan Lin , Xun Yang , Chong-Xin Shan , Yuan Zhang

Unlocking the vast potential of optical sensing technology has long been hindered by the challenges of achieving fast, sensitive, and broadband photodetection at ambient temperatures. In this review, we summarize recent progress in the…

介观与纳米尺度物理 · 物理学 2024-06-19 Yulin Shen , Louis Primeau , Jiangxu Li , Tuan-Dung Nguyen , David Mandrus , Yuxuan Cosmi Lin , Yang Zhang

Magnetic imaging based on ensembles of diamond nitrogen-vacancy quantum sensors has emerged as a useful technique for the spatial characterisation of magnetic materials and current distributions. However, demonstrations have so far been…

The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image…

The photoexcitation life-cycle from incident photon (and creation of photoexcited electron hole pair) to ultimate extraction of electrical current is a complex multi-physics process spanning across a range of spatio-temporal scales of…

介观与纳米尺度物理 · 物理学 2025-01-29 Qiong Ma , Roshan Krishna Kumar , Su-Yang Xu , Frank H. L. Koppens , Justin C. W. Song

A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…

介观与纳米尺度物理 · 物理学 2015-01-27 Yufei Cao , Kaiming Cai , Pingan Hu , Lixia Zhao , Tengfei Yan , Xinhui Zhang , Xiaoguang Wu , Kaiyou Wang , Houzhi Zheng

Photonic spin density (PSD) in the near-field gives rise to exotic phenomena such as photonic skyrmions, optical spin-momentum locking and unidirectional topological edge waves. Experimental investigation of these phenomena requires a…

量子物理 · 物理学 2021-10-04 Farid Kalhor , Li-Ping Yang , Leif Bauer , Zubin Jacob

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use…

Nitrogen-vacancy (NV) centers in diamond are a leading modality for magnetic sensing and imaging under ambient conditions. However, these sensors suffer from degraded performance due to paramagnetic impurities and regions of stress in the…

量子物理 · 物理学 2024-04-22 Connor Roncaioli , Connor Hart , Ronald Walsworth , Donald P. Fahey

The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current…

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding…

介观与纳米尺度物理 · 物理学 2017-08-02 Eric Parzinger , Martin Hetzl , Ursula Wurstbauer , Alexander W. Holleitner
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