相关论文: Engineering Thermal and Electrical Interface Prope…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Electronic and thermoelectric properties of a two-dimensional MoS2 monolayer containing atomic defects are investigated using density functional theory. All the atomic defects have been found to exhibit endothermic nature. Electronic…
The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
Computing-in-Memory (CiM) is a promising paradigm to address the memory bottleneck constraining traditional systems. Most power-efficient CiM variants can directly perform Boolean operations in non-volatile memory arrays. Higher…
The prevalent high intrinsic absorption in the crystalline state of phase-change materials (PCMs), typically leads to a decline in modulation efficiency for phase-change metasurfaces, underutilizing their potential for quasi-continuous…
The optical properties of phase-change materials (PCM) can be tuned to multiple levels by controlling the transition between their amorphous and crystalline phases. In multi-material PCM structures, the number of discrete reflectance levels…
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…
Programmable photonic integrated circuits are expected to play an increasingly important role to enable high-bandwidth optical interconnects, and large-scale in-memory computing as needed to support the rise of artificial intelligence and…
The semiconductor industry is reaching a fascinating confluence in several evolutionary trends that will likely lead to a number of revolutionary changes in the design, implementation, scaling, and the use of computer systems. However,…
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance…
The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…
The increase in the temperature of photovoltaic (PV) solar cells affects negatively their power conversion efficiency and decreases their lifetime. The negative effects are particularly pronounced in concentrator solar cells. Therefore, it…
Electrical and thermal properties of atomically thin two-dimensional (2D) materials are affected by their environment, e.g. through remote phonon scattering or dielectric screening. However, while it is known that mobility and thermal…
Phase-change materials (PCMs)-based integrated photonic memory offers a viable pathway for the development of neuromorphic computing chip. The sizable optical contrast in the telecom band between amorphous and crystalline phases of PCM, in…
This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the…
Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the…
CMOS-based microelectronics are limited to ~150{\deg}C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic,…
The two-dimensional (2D) layered semiconductors such as MoS2 have attracted tremendous interest as a new class of electronic materials. However, there is considerable challenge in making reliable contacts to these atomically thin materials.…