相关论文: Switching behaviour of stilbene molecular device: …

Sensory arrays made of coupled excitable elements can improve both their input sensitivity and dynamic range due to collective non-linear wave properties. This mechanism is studied in a neural network of electrically coupled (e.g. via gap…

We explore electron transport in a thin cylinder, attached to two semi-infinite one-dimensional metallic electrodes, in the presence of both longitudinal and transverse magnetic fluxes. A simple tight-binding model is used to describe the…

The spin Seebeck effect has recently been demonstrated as a viable method of direct energy conversion that has potential to outperform energy conversion from the conventional Seebeck effect. In this study, a computational transport model is…

Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…

Transition metal dichalcogenides have shown great promise in the field of gas sensing due to their high catalytic activity and unique electronic properties. They can effectively interact with various gas molecules, making them suitable…

We demonstrate a weak continuous measurement of the pseudo-spin associated with the clock transition in a sample of Cs atoms. Our scheme uses an optical probe tuned near the D1 transition to measure the sample birefringence, which depends…

In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…

The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a…

Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…

We derive an invariant form of the current-induced switching condition in spin-transfer devices and show that for energy minima and maxima the "switching ability" of the current is determined by the spin torque divergence. In contrast,…

The efficient transfer of quantum states into a long-lived storage unit such as solid-state spin ensembles is widely recognized as a critical challenge with significant implications for quantum communication, sensing and computing…

Probabilistic inference from real-time input data is becoming increasingly popular and may be one of the potential pathways at enabling cognitive intelligence. As a matter of fact, preliminary research has revealed that stochastic…

Novel physics arises when strongly correlated system is driven out of equilibrium by external fields. Dramatic changes in physical properties, such as conductivity, are empirically observed in strongly correlated materials under high…

The Seebeck coefficient is an important quantity in determining the thermoelectric efficiency of a material. Phosphorene is a two-dimensional material with a puckered structure, which makes its properties anisotropic. In this work, a…

We introduce a machine learning approach to determine the transition dynamics of silicon atoms on a single layer of carbon atoms, when stimulated by the electron beam of a scanning transmission electron microscope (STEM). Our method is…

The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…

Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive…

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…

For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we…