相关论文: Dislocation and node states in bilayer graphene sy…

A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…

In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point…

We evaluate the electronic transmission and conductance in bilayer graphene through a finite number of potential barriers. Further, we evaluate the dispersion relation in a bilayer graphene superlattice with a periodic potential applied to…

A Weyl semimetal pierced by a screw dislocation accommodates one-dimensional (1D) chiral states along the corresponding dislocation line. As these states propagate in a particular direction determined by their chirality, a persistent…

The bands of graphite are extremely sensitive to topological defects which modify the electronic structure. In this paper we found non-dispersive flat bands no farther than 10 meV of the Fermi energy in slightly twisted bilayer graphene as…

We study the localized magnetic states of impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene presents the mixing features of Dirac and conventional fermion. For zero…

We study charge fractionalization in bilayer graphene which is intimately related to its zero modes. In the unbiased case, the valley zero modes occur in pairs rendering it unsuitable for charge fractionalization. A bias plays the role of a…

We present an ab-initio density function theory to investigate the electronic and magnetic structures of the bilayer graphene with intercalated atoms C, N, and O. The intercalated atom although initially positioned at the middle site of the…

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…

We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states…

The competing ground states of bilayer graphene are studied by applying renormalization group techniques to a bilayer honeycomb lattice with nearest neighbor hopping. In the absence of interactions, the Fermi surface of this model at…

We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the…

We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat…

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…

Stacking two graphene layers twisted by the 'magic angle' $\theta \approx 1.1^\circ$ generates flat energy bands, which in turn catalyzes various strongly correlated phenomena depending on filling and sample details. At charge neutrality,…

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in…

In the presence of axial magnetic fields that can be realized in deliberately buckled monolayer graphene, quasi-relativistic Dirac fermions may find themselves in a variety of broken symmetry phases even for weak interactions. Through a…

Strong interaction between electrons in two-dimensional systems in the presence of a high magnetic field gives rise to fractional quantum Hall states that host quasiparticles with fractional charge and fractional exchange statistics. Here,…

We present the results for the evolution of the Fermi surfaces under variation of number density and displacement field for spin and valley-polarized states in Bernal bilayer graphene (BBG) using a realistic form of the electronic…

Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external…