相关论文: Electron effective mass and electronic structure i…

We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are…

The high room temperature mobility and the electron effective mass in BaSnO$_3$ are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from…

We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness $t$ ranging from $\sim$5 to $\sim$53\,nm. Scanning electron microscopy and x-ray diffraction results…

Ta-doped SnO$_2$ films with high conductivity and high optical transparency have been successfully fabricated using rf-sputtering method and their electrical transport properties have been investigated. All films reveal degenerate…

Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure $c$-plane oriented In$_{0.33}$Ga$_{0.67}$N epitaxial layer. Room temperature electron…

We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…

The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve…

Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440…

Both the semi-classical and quantum transport properties of F-doped SnO$_2$ thick films ($\sim$1\,$\mu$m) were investigated experimentally. It is found that the resistivity caused by the thermal phonons obeys Bloch-Gr\"{u}neisen law from…

High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge…

The speed of integrated circuits is ultimately limited by the mobility of electrons or holes, which depend on the effective mass in a semiconductor. Here, building on an analogy with electromagnetic metamaterials and transformation optics,…

The authors have shown that nanogranular indium tin oxide (ITO) films, deposited by spray pyrolysis on silicon substrate, demonstrate ultralow thermal conductivity ~ 0.84 +/-0.12 Wm-1K-1 at room temperature. This value is approximately by…

Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been…

The electronic behavior of various solid metals (Al, Ni, Cu, Au, Ti, and W) under ultrashort laser irradiation is investigated by means of density functional theory. Successive stages of extreme nonequilibrium on picosecond time scale…

The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental data from indium gallium zinc oxide (IGZO) FETs in…

Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopical…

Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced computing. Despite extensive research, the charge transport…

Analyzing {\it{ab-initio}} electronic and phonon band structure, temperature-dependent carrier transport in layered Ti$_{2}$AlC is investigated. It is found that cylindrical Fermi surface is the origin of the anisotropic carrier effective…

The structure-property relation of nanostructured Al-doped ZnO thin films has been investigated in detail through a systematic variation of structure and morphology, with particular emphasis on how they affect optical and electrical…

We investigate the electrical transport in mesoscopic structures of La$_{0.67}$Ca$_{0.33}$MnO$_3$ in the regime of the metal-insulator transition by fabricating microbridges from strained and unstrained thin films. We measure…