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相关论文: Stacking defects in GaP nanowires: Electronic stru…

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In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the…

介观与纳米尺度物理 · 物理学 2025-05-12 Pradip Adhikari , Anjali Rathore , Dayrl P Briggs , Srijanto R Bernadeta , Joon Sue Lee

The superconducting proximity effect has been the focus of significant research efforts over many years and has recently attracted renewed interest as the basis of topologically non-trivial states in materials with a large spin orbit…

介观与纳米尺度物理 · 物理学 2019-07-10 C. Jünger , A. Baumgartner , R. Delagrange , D. Chevallier , S. Lehmann , M. Nilsson , K. A. Dick , C. Thelander , C. Schönenberger

Preparation of solid solutions represents an effective means to improve the photocatalytic properties of semiconductor-based materials. Nevertheless, the effects of site-occupancy disorder on the mixing stability and electronic properties…

材料科学 · 物理学 2018-12-11 Joel Shenoy , Judy N. Hart , Ricardo Grau-Crespo , Neil L. Allan , Claudio Cazorla

Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of…

化学物理 · 物理学 2015-09-01 Avinash Patsha , S. Amirthapandian , Ramanathaswamy Pandian , S. Dhara

The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like the spin-orbit coupling and…

We report on scanning tunneling microscopy and spectroscopy of grain boundaries in highly oriented pyrolytic graphite. Grain boundaries showed a periodic structure and an enhanced charge density compared to the bare graphite surface. Two…

材料科学 · 物理学 2013-05-29 J. Cervenka , C. F. J. Flipse

We study the effects of disorder on bilayer graphene using four different microscopic models and directly compare their results. We compute the self-energy, density of states, and optical conductivity in the presence of short-ranged…

介观与纳米尺度物理 · 物理学 2012-01-27 D. S. L. Abergel , Hongki Min , E. H. Hwang , S. Das Sarma

The effects of substrate on electronic and optical properties of triangular and hexagonal graphene nanoflakes with armchair edges are investigated by using a configuration interaction approach beyond double excitation scheme. The…

介观与纳米尺度物理 · 物理学 2015-06-17 W. Sheng , M. Sun , A. Zhou , S. J. Xu

Graphene nanomeshes (GNMs) are novel materials that recently raised a lot of interest. They are fabricated by forming a lattice of pores in graphene. Depending on the pore size and pore lattice constant, GNMs can be either semimetallic or…

材料科学 · 物理学 2020-08-21 Sarah Gamal , Mohamed M. Fadlallah , Lobna M. Salah , Ahmed A. Maarouf

In this letter we study the electronic structures and optical properties of partially and fully fluorinated graphene by a combination of abinitio G0W0 calculations and large-scale multi-orbital tight-binding simulations. We find that for…

介观与纳米尺度物理 · 物理学 2015-02-25 Shengjun Yuan , Malte Rosner , Alexander Schulz , Tim O. Wehling , Mikhail I. Katsnelson

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…

This study provides a comprehensive physical and optical investigation of InGaN nanowires (NWs) designed to address the challenges posed by the green gap region. We conduct a detailed analysis of the morphology, structure, and optical…

Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…

介观与纳米尺度物理 · 物理学 2008-04-10 D. Basu , M. J. Gilbert , L. F. Register , A. H. MacDonald , S. K. Banerjee

In this work the effects of defects in the superconducting phases of the twisted bilayer graphene (TBG) are investigated. A will-accepted low energy effective model and a non-magnetic impurity potential to mimic defects are employed.…

超导电性 · 物理学 2020-09-08 Hui Yang , Zhi-Qiang Gao , Fa Wang

The effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate and transport properties (diffusion coefficient…

介观与纳米尺度物理 · 物理学 2009-03-24 K. Ziegler

The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some…

In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent…

Geometric and electronic properties of folded graphene nanoribbons (FGNRs) are investigated by first-principles calculations. These properties are mainly dominated by the competition or cooperation among stacking, curvature and edge…

计算物理 · 物理学 2015-09-15 Shen-Lin Chang , Bi-Ru Wu , Po-Hua Yang , Ming-Fa Lin

The effects of edge covalent functionalization on the structural, electronic and optical properties of elongated armchair graphene nanoflakes (AGNFs) are analyzed in detail for a wide range of terminations, within the ramework of…

介观与纳米尺度物理 · 物理学 2015-02-26 Caterina Cocchi , Deborah Prezzi , Alice Ruini , Marilia J. Caldas , Elisa Molinari

In this Letter, we put forward a resolution to the prolonged ambiguity in energy band gaps between theory and experiments of fabricated graphene nanoribbons (GNRs). Band structure calculations using density functional theory are performed…

介观与纳米尺度物理 · 物理学 2016-10-11 Deepika , T. J. Dhilip Kumar , Alok Shukla , Rakesh Kumar