相关论文: Phase Slips and Parity Jumps in Quantum Oscillatio…
The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase…
We present a magnetization measurement probing the transition from a quantum Hall to insulating (QH-I) state for a two-dimensional electron gas in a disordered GaAs/AlGaAs heterostructure. Using a highly sensitive DC torque magnetometer, we…
We investigated the behavior of fractional quantum Hall (FQH) states in a two-dimensional electron system with layer thickness and an in-plane magnetic field. Our comparisons across various filling factors within the first Landau level…
We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening…
We study effects of tilted magnetic fields on energy levels in a double-quantum-well (DQW) system, focusing on the coupling of subbands and Landau levels (LLs). The subband-LL coupling induces anticrossings between LLs, manifested directly…
We investigate the ground state competition at the transition from the spin unpolarized to spin ordered phase at filling factor $\nu=2/3$ in single layer heterostructure and at $\nu=2$ in double layer quantum well. To trace the quantum Hall…
The orbital structure of the quantum Hall ferromagnetic states in the zero-energy Landau level in chiral multilayer graphene (AB, ABC, ABCA, etc.\ stackings) is determined by the exchange interaction with all levels, including deep-lying…
Quantum Phase slips are dual process of particle tunneling in coherent networks. Besides to be of central interest for condensed matter physics, quantum phase slips are resources that are sought to be manipulated in quantum circuits. Here,…
Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of…
We report new experimental data on the plateau-insulator transition in the quantum Hall regime, taken from a low mobility InGaAs/InP heterostructure. By employing the fundamental symmetries of the quantum transport problem we are able to…
A two-dimensional quantum Hall system without disorder for a wide class of interactions including any two-body interaction with finite range is studied by using the Lieb-Schultz-Mattis method [{\it Ann. Phys. (N.Y.)} {\bf 16}: 407 (1961)].…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
We study quantum oscillations of the magnetization in Bi$_{2}$Se$_{3}$(111) surface system in the presence of a perpendicular magnetic field. The combined spin-chiral Dirac cone and Landau quantization produce profound effects on the…
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength…
We study a $Al_{x}Ga_{x-1}As$ parabolic quantum wells (PQW) with $GaAs/Al_{x}Ga_{x-1}As$ square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
Even denominator fractional quantum Hall states in a ZnO quantum well reveal interesting phase transitions in a tilted magnetic field. We have analyzed the planar electron gas in ZnO, confined in a parabolic potential in the third…
We report the observation of developing fractional quantum Hall states at Landau level filling factors $\nu = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The…
The Landau level mixing is the key in understanding the mysterious $5/2$ fractional quantum Hall effect in GaAs quantum well. Theoretical calculations with and without Landau level mixing show striking differences. However, the way to deal…
Unconventional magneto-transport fingerprints in the quantum Hall regime (with applied magnetic field from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from…