相关论文: Optimization of Amorphous Germanium Electrical Con…

Radiation detectors constructed from large volume high purity Ge (HPGe) single crystals are widely used for gamma-ray spectroscopy. The detectors for this application can be simple in that they need only have two electrical contacts for…

The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota…

Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We…

Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are…

The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge…

For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut fuer Physics in Munich. The…

High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (< 2x10^(-4) ppb of doping impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the…

We present a contactless method for measuring charge in a thin film of amorphous germanium (a-Ge) with a nanoscale silicon MOSFET charge sensor. This method enables the measurement of conductance of the a-Ge film even in the presence of…

Rare-event experiments such as LEGEND-1000 require high-purity germanium (HPGe) detectors with excellent energy resolution, low electronic noise, and scalable low-background packaging. The germanium ring-contact (GeRC) concept addresses…

Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts…

A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+…

Fabrication of diode by forming n-type electrical contact on germanium (Ge) and its AC impedance analysis is important for radiation detection in the form of pulses. In this work lithium (Li) metal has been electro-deposited on p-type Ge…

Rare-event searches including dark matter, coherent elastic neutrino--nucleus scattering (CE$\nu$NS), and neutrinoless double-beta decay (0$\nu\beta\beta$) require high-purity germanium (HPGe) detectors with ultralow noise, stable…

Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical…

Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, in which the PCM operation involves fast and reversible phase change between amorphous and crystalline phases. In this…

Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in low-background physics experiments. However, some physical processes may not be detectable with existing detectors whose…

Germanium-on-Silicon (Ge-on-Si) is a promising, CMOS-compatible platform for integrated terahertz (THz) photonics, offering a low-cost alternative to III-V semiconductors. A primary challenge for Ge-based photoconductive antennas (PCAs),…

High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier…

The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which…

We report the fabrication and characterization of two p-type inverted coaxial point contact (ICPC) high-purity germanium (HPGe) detectors, SAP16 and SAP17, produced from USD-grown crystals with net impurity concentrations of $\sim…