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相关论文: Anomalous Hall Effect and Spin Fluctuations in Ion…

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The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in…

计算物理 · 物理学 2020-02-18 Ping Li , Tian-Yi Cai

Quantum magnetic oscillations in SrTiO3/\LaAlO3 interface are observed. The evolution of their frequency and amplitude at various gate voltages and temperatures is studied. The data are consistent with the Shubnikov de-Haas theory. The Hall…

强关联电子 · 物理学 2015-05-19 M. Ben Shalom , A. Ron , A. Palevski , Y. Dagan

Epitaxial strain in thin films can yield surprising magnetic and electronic properties not accessible in bulk. One materials system destined to be explored in this direction are orthoferrites with two intertwined spin systems where strain…

The interplay of magnetism and spin-orbit coupling on an Fe kagome lattice in Fe3Sn2 crystal produces a unique band structure leading to an order of magnitude larger anomalous Hall effect than in conventional ferromagnetic metals. In this…

材料科学 · 物理学 2019-03-08 Y. Satake , K. Fujiwara , J. Shiogai , T. Seki , A. Tsukazaki

It has been well established that both in bulk at ambient pressure and for films under modest strains, cubic SrCoO$_{3-\delta}$ ($\delta < 0.2$) is a ferromagnetic metal. Recent theoretical work, however, indicates that a magnetic phase…

材料科学 · 物理学 2015-06-23 S. J. Callori , S. Hu , J. Bertinshaw , Z. Yue , S. Danilkin , X. L. Wang , V. Nagarajan , F. Klose , J. Seidel , C. Ulrich

Non-coplanar spin textures with scalar spin chirality can generate effective magnetic field that deflects the motion of charge carriers, resulting in topological Hall effect (THE), a powerful probe of the ground state and low-energy…

We predict robust Ising ferromagnetism driven by Coulomb interaction in the metallic phase of twisted transition metal dichalcogenides homobilayers for a range of small twist angles. Due to the presence of spin-valley locking and Chern…

强关联电子 · 物理学 2023-05-24 Valentin Crépel , Liang Fu

Skyrmions and other chiral spin textures have been extensively studied as potential building blocks for novel spintronic devices. Hall-resistivity anomalies that deviate from magnetization scaling, known as the topological Hall effect, have…

强关联电子 · 物理学 2026-03-31 BoCheng Yu , JiaLiang Jiang , Jing Meng , XiaoYan Zhu , Jie Ma , HaiFeng Du , QingFeng Zhan , Jin Tang , Yang Xu , Tian Shang

The origins of the anomalous temperature dependence of magnetocrystalline anisotropy in (Fe$_{1-x}$Co$_{x}$)$_{2}$B alloys are elucidated using first-principles calculations within the disordered local moment model. Excellent agreement with…

材料科学 · 物理学 2015-11-17 Ivan A. Zhuravlev , Vladimir P. Antropov , Kirill D. Belashchenko

An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new…

介观与纳米尺度物理 · 物理学 2019-07-03 Pan He , Steven S. -L. Zhang , Dapeng Zhu , Shuyuan Shi , Olle G. Heinonen , Giovanni Vignale , Hyunsoo Yang

Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing…

强关联电子 · 物理学 2014-12-05 Abhijit Biswas , Ki-Seok Kim , Yoon Hee Jeong

The temperature $T$ and magnetic field $H$ dependence of the resistivity $\rho$ has been measured for La$_{0.8-y}$Sr$_{0.2}$MnO$_{3}$ (y=0 and 0.128) films grown on (100) SrTiO$_{3}$ substrates. The low-temperature $\rho$ in the…

强关联电子 · 物理学 2009-11-10 X. J. Chen , H. -U. Habermeier , C. L. Zhang , H. Zhang , C. C. Almasan

The generation and control of spin currents are crucial for advancing next-generation spintronic technologies. These technologies depend on materials capable of efficiently sourcing and interconverting spin and charge currents, while…

Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of…

材料科学 · 物理学 2023-12-01 Cheng Zhang , Shuang Pan , Peihao Wang , Yuchen Men , Xiang Li , Yuqing Bai , Li Tang , Feng Xu , Guizhou Xu

$\rm SrRuO_3$ is an itinerant ferromagnet with $T_c \sim 150 \rm K$. When $\rm SrRuO_3$ is cooled through $T_c$ in zero applied magnetic field, a stripe domain structure appears whose orientation is uniquely determined by the large uniaxial…

强关联电子 · 物理学 2011-06-15 L. Klein , Y. Kats , A. F. Marshall , J. W. Reiner , T. H. Geballe , M. R. Beasley , A. Kapitulnik

We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse…

$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We…

We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of…

The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-films. At 5 K, rho_{xy} is positive…

强关联电子 · 物理学 2009-10-31 S. H. Chun , M. B. Salamon , P. D. Han

A pronounced step-like (kink) behavior in the temperature dependence of resistivity $\rho (T)$ is observed in the optimally-doped $Sm_{1.85}Ce_{0.15}CuO_4$ thin films around $T_{sf}=87K$ and attributed to manifestation of strong spin…

超导电性 · 物理学 2007-08-30 S. Sergeenkov , A. J. C. Lanfredi , F. M. Araujo-Moreira
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