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Single crystals of CeGe and its non-magnetic analogue LaGe have been grown by Czochralski method. CeGe compound crystallizes in the orthorhombic FeB-type crystal structure with the space group \textit{Pnma} (#62). The anisotropic magnetic…

强关联电子 · 物理学 2012-07-18 Pranab Kumar Das , Neeraj Kumar , R. Kulkarni , S. K. Dhar , A. Thamizhavel

In order to investigate the anisotropic magnetic properties of CeAg$_2$Ge$_2$, we have successfully grown the single crystals, for the first time, by high temperature solution growth (flux) method. We have performed a detailed study of the…

强关联电子 · 物理学 2009-11-11 A. Thamizhavel , R. Kulkarni , S. K. Dhar

The anisotropic magnetic properties of the antiferromagnetic compound CePd$_2$Ge$_2$, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical…

强关联电子 · 物理学 2015-06-16 Arvind Maurya , R. Kulkarni , S. K. Dhar , A. Thamizhavel

We have grown the single crystals of LaAu$_{2}$In$_{4}$ and CeAu$_{2}$In$_{4}$ by high temperature solution method and report on the anisotropic magnetic behavior of CeAu$_{2}$In$_{4}$ . The compounds crystallize in an orthorhombic…

强关联电子 · 物理学 2015-05-13 Devang A. Joshi , P. Manfrinetti , S. K. Dhar , A. Thamizhavel

We report the synthesis and the magnetic properties of single crystalline CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$ and their non magnetic La-analogs. The single crystals of these quaternary compounds were grown using Al-Si binary eutectic as…

强关联电子 · 物理学 2016-03-23 Arvind Maurya , R. Kulkarni , A. Thamizhavel , D. Paudyal , S. K. Dhar

Anisotropic magnetic properties of single crystalline RAu_{2}Ge_{2} (R = La, Ce and Pr) compounds are reported. LaAu_{2}Ge_{2} exhibit a Pauli-paramagnetic behavior whereas CeAu_{2}Ge_{2} and PrAu_{2}Ge_{2} show an antiferromagnetic…

强关联电子 · 物理学 2015-05-14 Devang A. Joshi , A. K. Nigam , S. K. Dhar , A. Thamizhavel

Single crystals of R$_2$CoGa$_8$ series of compounds were grown, for the first time, by high temperature solution growth (flux) method. These compounds crystallize in a tetragonal crystal structure with the space group $P4/mmm$. It has been…

强关联电子 · 物理学 2008-01-30 Devang A. Joshi , R. Nagalakshmi , S. K. Dhar , A. Thamizhavel

Single crystals of the new compound CeCu0.18Al0.24Si1.58 have been grown by high-temperature solution growth method using a eutectic Al-Si mixture as flux. This compound is derived from the binary CeSi2 (tetragonal ThSi2-type, Pearson…

强关联电子 · 物理学 2017-01-04 A. Maurya , A. Thamizhavel , S. K. Dhar , A. Provino , M. Pani , G. A. Costa

We report on the single crystal growth of the ferromagnetic Kondo lattice system CeRuPO using a Sn flux method. Magnetic susceptibility and electrical resistivity measurements indicate strong anisotropy of this structurally layered…

强关联电子 · 物理学 2008-04-10 C. Krellner , C. Geibel

We report the anisotropic magnetic properties of the ternary compound ErAl$_2$Ge$_2$. Single crystals of this compound were grown by high temperature solution growth technique,using Al:Ge eutectic composition as flux. From the powder x-ray…

强关联电子 · 物理学 2020-04-22 Moumita Nandi , A. Thamizhavel , S. K. Dhar

We have successfully grown the single crystals of CeAg$_2$Ge$_2$, for the first time, by flux method and studied the anisotropic physical properties by measuring the electrical resistivity, magnetic susceptibility and specific heat. We…

强关联电子 · 物理学 2009-11-13 A. Thamizhavel , R. Kulkarni , S. K. Dhar

We have investigated a single crystal of CeAgSb2 using low field ac-susceptibility, thermal expansion and magnetostriction measurements in the temperature range 1.5K to 90K. The ac-susceptibility exhibits a sharp peak at 9.7K for both B//c…

强关联电子 · 物理学 2007-05-23 D. T. Adroja , P. C. Riedi , J. G. M. Armitage , D. Fort

We report the synthesis and physical characterization of single-crystalline Ce3MgBi5, a previously unexplored member of the Ce3MPn5 family. This compound crystallizes in the hexagonal P63/mcm structure, featuring an anisotropic Ce…

Single crystals of the new ternary compound Ce2Ga12Pt were prepared by the self-flux technique. The crystal structure with the space group P4/nbm was established from single-crystal X-ray diffraction data and presents a derivative of the…

强关联电子 · 物理学 2012-06-12 Olga Sichevych , Cornelius Krellner , Yuri Prots , Yuri Grin , Frank Steglich

The anisotropy in electrical transport and thermal behavior of single crystalline R$_{2}$CoGa$_{8}$ series of compounds is presented. These compounds crystallize in a tetragonal structure with space gropup P4/mmm. The nonmagnetic…

强关联电子 · 物理学 2013-05-29 Devang A. Joshi , A. K. Nigam , S. K. Dhar , A. Thamizhavel

We report the single crystal growth and anisotropic magnetic properties of the tetragonal RAg$_2$Ge$_2$ (R = Pr, Nd and Sm) compounds which crystallize in the ThCr$_2$Si$_2$ type crystal structure with the space group \textit{I4/mmm}. The…

强关联电子 · 物理学 2015-05-13 Devang A. Joshi , R. Nagalakshmi , R. Kulkarni , S. K. Dhar , A. Thamizhavel

Sizable single crystals of $BaFe_2As_2$ have been grown with self-flux method. The crystals are plate-like with c-axis perpendicular to the plane. The size can be as large as 3 x 5 x 0.2 $mm^3$. The resistivity anisotropy…

超导电性 · 物理学 2009-11-13 X. F. Wang , T. Wu , G. Wu , H. Chen , Y. L. Xie , J. J. Ying , Y. J. Yan , R. H. Liu , X. H. Chen

We investigated the anisotropic magnetic properties of CePd$_2$As$_2$ by magnetic, thermal and electrical transport studies. X-ray diffraction confirmed the tetragonal ThCr$_2$Si$_2$-type structure and the high-quality of the single…

强关联电子 · 物理学 2017-08-09 M. O. Ajeesh , T. Shang , W. B. Jiang , W. Xie , R. D. dos Reis , M. Smidman , C. Geibel , H. Q. Yuan , M. Nicklas

We investigate the physical properties of high-quality single crystals CeGaGe and PrGaGe using magnetization, heat capacity, and magnetotransport measurements. Gallium-indium binary flux was used to grow these single crystals that…

强关联电子 · 物理学 2024-01-30 Daloo Ram , Sudip Malick , Zakir Hossain , Dariusz Kaczorowski

We report measurements on single crystals of orthorhombic CeNiGe2, which is found to exhibit highly anisotropic magnetic and transport properties. The magnetization ratio M(H//b)/M(H^b) at 2 K is observed to be about 18 at 4 T and the…

强关联电子 · 物理学 2009-11-07 M. H. Jung , N. Harrison , A. H. Lacerda , P. G. Pagliuso , J. L. Sarrao , J. D. Thompson
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