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相关论文: Disorder control in crystalline GeSb2Te4 and its i…

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In a recent experiment, Siegrist et al. [Nature Materials 10, 202 (2011)] investigated the metal-insulator transition (MIT) of GeSb_2Te_4 on increasing annealing temperature. The authors conclude that this material exhibits a discontinuous…

无序系统与神经网络 · 物理学 2018-02-27 A. Mobius

At low temperature T, a significant difference between the behavior of crystals on the one hand and disordered solids on the other is seen: sufficiently strong disorder can give rise to a transition of the transport properties from…

无序系统与神经网络 · 物理学 2018-03-21 Rudolf A Roemer , Michael Schreiber

Here we report the discovery of superconductivity in multiple phases of the compressed GeSb2Te4 (GST) phase change memory alloy, which has attracted considerable attention for the last decade due to its unusual physical properties with many…

We show that polycrystalline GeSb2Te4 in the fcc phase (f-GST), which is an insulator at low temperature at ambient pressure, becomes a superconductor at elevated pressures. Our study of the superconductor to insulator transition versus…

We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or…

材料科学 · 物理学 2010-11-29 Jeongwoo Kim , Jinwoong Kim , Seung-Hoon Jhi

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two…

强关联电子 · 物理学 2015-06-15 Elias Lahoud , O. Nganba Meetei , K. B. Chaska , A Kanigel , Nandini Trivedi

The ability to control the spin textures in semiconductors is a fundamental step toward novel spintronic devices, while seeking desirable materials exhibiting persistent spin texture (PST) remains a key challenge. The PST is the property of…

强关联电子 · 物理学 2021-05-20 Moh. Adhib Ulil Absor , Yusuf Faisho , Muhammad Anshory , Iman Santoso , Sholihun , Harsojo , Fumiyuki Ishii

Since the prediction of spin-gapless semiconducting behaviour in the Heusler compound Mn$_2$CoAl, evidence of spin-gapless behaviour in thin films has typically been inferred from magnetotransport measurements. The spin gapless state is…

Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage,…

介观与纳米尺度物理 · 物理学 2012-11-06 Nicholas P. Breznay , Hanno Volker , Alexander Palevski , Riccardo Mazzarello , Aharon Kapitulnik , Matthias Wuttig

Chalcogenide materials are an important class of phase change material (PCMs) owing to their employment in digital memory solutions. Chalgogenide materials have applications in phase change random access memory (PCRAM) due to their ability…

材料科学 · 物理学 2025-10-15 Owain T. Beynon , Adham Hashibon

Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting underlying symmetry, such as time reversal, is preserved. The…

We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis…

强关联电子 · 物理学 2009-10-31 Qimiao Si , C. M. Varma

Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing…

强关联电子 · 物理学 2014-12-05 Abhijit Biswas , Ki-Seok Kim , Yoon Hee Jeong

It is demonstrated that persistent-photoconductivity (PPC), well-studied in lightly-doped semiconductors, is observable in GeSbTe compounds using infrared excitation at cryogenic temperatures. The low level of energy-flux necessary to…

强关联电子 · 物理学 2015-03-26 Z. Ovadyahu

Phase-change materials of the (GeTe)n (Sb2Te3) (GST) system are of high relevance in memory storage and energy conversion applications due to their fast-switching speed, high data retention, and tunable properties. Here, we report on a fast…

材料科学 · 物理学 2025-07-18 M. Zhezhu , A. Vasil'ev , M. Yapryntsev , E. Ghalumyan , D. A. Ghazaryan , H. Gharagulyan

Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by…

Recent breakthrough on topological Anderson insulators revealed the breakdown of the traditional perception that sufficiently strong disorder may induce the appearance of topological protected transport states instead of destruction.…

介观与纳米尺度物理 · 物理学 2021-11-15 Hui Liu , Boyang Xie , Haonan Wang , Wenwei Liu , Zhancheng Li , Hua Cheng , Jianguo Tian , Zhengyou Liu , Shuqi Chen

As a sister compound and isostructural of MnBi2Te4, the high quality MnSb2Te4 single crystals are grown via solid-state reaction where prolonged annealing and narrow temperature window play critical roles on account of its thermal…

材料科学 · 物理学 2021-04-05 Hao Li , Yaoxin Li , Yu-Kun Lian , Weiwei Xie , Ling Chen , Jinsong Zhang , Yang Wu , Shoushan Fan

Abstract: Using ab initio calculations supported by experimental transport measurements, we present the first credible candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High energy…

材料科学 · 物理学 2021-06-29 Binayak Mukherjee , Eleonora Isotta , Narges Ataollahi , Paolo Scardi

Crystals are a state of matter characterised by periodic order. Yet crystalline materials can harbour disorder in many guises, such as non-repeating variations in composition, atom displacements, bonding arrangements, molecular…

材料科学 · 物理学 2019-12-03 Arkadiy Simonov , Andrew L. Goodwin
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