相关论文: Further investigations of the deep double donor ma…

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a…

We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine…

We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a…

Theoretical work has suggested that monolayer MoS2 doped with Mn should behave as a two-dimensional dilute magnetic semiconductor, which would open up possibilities for spintronic applications, device physics, and novel ground states. The…

Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve…

Strong coupling between the electronic states of monolayer transition metal dichalcogenides (TMDC) such as MoS$_2$, MoSe$_2$, WS$_2$, or WSe$_2$, and a two-dimensional (2D) photonic cavity gives rise to several exotic effects. The Dirac…

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…

We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor…

The efficient optical second-harmonic generation (SHG) of two-dimensional (2D) crystals, coupled with their atomic thickness that circumvents the phase-match problem, has garnered considerable attention. While various 2D heterostructures…

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are…

Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well…

The S=1/2 Heisenberg spin chain compound SrCuO2 doped with different amounts of nickel (Ni), palladium (Pd), zinc (Zn) and cobalt (Co) has been studied by means of Cu nuclear magnetic resonance (NMR). Replacing only a few of the S=1/2 Cu…

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into…

To shed light on the symmetry of the superconducting order parameter in Na_xCoO_2-yH_2O, the Mn doping effects are studied. X-ray absorption spectroscopy verifies that the doped Mn impurities occupy the Co sites and are with a valance close…

Shallow donors in ZnO are promising candidates for photon-mediated quantum technologies. Utilizing the indium donor, we show that favorable donor-bound exciton optical and electron spin properties are retained in isolated ZnO nanowires. The…

Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin…

Transition metal dichalcogenides, a family of two-dimensional compounds, are of interest for a range of technological applications. MoS2, the most researched member of this family, is hexagonal, from which monolayers may be isolated. Under…

We present an ultrasensitive technique for probing transient optical changes in atomically thin molybdenum disulfide (MoS$_2$) layers integrated onto silicon nitride (Si$_3$N$_4$) ring resonators. The MoS$_2$ is illuminated by a femtosecond…

The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly…

We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a…