相关论文: Single-shot multi-level all-optical magnetization …

Ultrafast manipulation of magnetic order has challenged our understanding the fundamental and dynamic properties of magnetic materials. So far single shot magnetic switching has been limited to ferrimagnetic alloys and multilayers. In…

This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…

In this study, we explore the influence of interlayer exchange coupling on magnetization reversal triggered by femtosecond laser pulses in ferromagnetic spin valves. Our experiments, focused on femtosecond laser-induced magnetization…

All-optical spin switching is a potential trailblazer for information storage and communication at an unprecedented fast rate and free of magnetic fields. However, the current wisdom is largely based on semiempirical models of effective…

Although all-optical magnetization switching with fs laser pulses has garnered much technological interest, the ultimate data rates achievable have scarcely been investigated. Recently it has been shown that after a switching event in a…

Ultrafast laser pulses provide unique tools to manipulate magnetization dynamics at femtosecond timescales, where the interaction of the electric field -- such as excitation of spin carriers to non-equilibrium states, generation of…

All-optical switching (AOS) involves manipulating magnetization using only pulsed laser, presenting a promising approach for next-generation magnetic recording devices. NiCo2O4 (NCO) thin films, a rare-earth-free ferrimagnetic oxide,…

Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…

Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and…

Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large…

We have measured the hot-electron induced demagnetization of a [Co/Pt]2 multilayer in M(x nm)/Cu(100 nm)/[Co(0.6 nm)/Pt(1.1 nm)]2 samples depending on the nature of the capping layer M and its thickness x. We found out that a Pt layer is…

Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded…

We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping…

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…

Resonant absorption of a photon by bound electrons in a solid can promote an electron to another orbital state or transfer it to a neighboring atomic site. Such a transition in a magnetically ordered material could affect the magnetic…

Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…

Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…

The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…

The recently discovered altermagnets exhibit collinear magnetic order with zero net magnetization but with unconventional spin-polarized d/g/i-wave band structures, expanding the known paradigms of ferromagnets and antiferromagnets. In…

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for…