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相关论文: Hole Transport in Exfoliated Monolayer MoS$_2$

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Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing…

介观与纳米尺度物理 · 物理学 2024-05-28 Sudipta Majumder , Vaibhav Walve , Rahul Chand , Gokul M. A. , Sooyeon Hwang , G. V. Pavan Kumar , Aparna Deshpande , Atikur Rahman

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

Intrinsic electron- and hole-phonon interactions are investigated in monolayer transition metal dichalcogenides MX$_2$ (M=Mo,W; X=S,Se) based on a density functional theory formalism. Due to their structural similarities, all four materials…

介观与纳米尺度物理 · 物理学 2015-06-22 Zhenghe Jin , Xiaodong Li , Jeffrey Thomas Mullen , Ki Wook Kim

Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical…

材料科学 · 物理学 2017-01-10 Zhihao Yu , Zhun-Yong Ong , Songlin Li , Jian-Bin Xu , Gang Zhang , Yong-Wei Zhang , Yi Shi , Xinran Wang

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…

介观与纳米尺度物理 · 物理学 2016-02-05 Evgeniy Ponomarev , Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Alberto F. Morpurgo

Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur…

Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for…

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

介观与纳米尺度物理 · 物理学 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe$_2$…

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is…

介观与纳米尺度物理 · 物理学 2018-07-24 Evgeniy Ponomarev , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Helmuth Berger , Alberto F. Morpurgo

Either in bulk form, or when exfoliated into atomically thin crystals, layered transition metal dichalcogenides are continuously leading to the discovery of new phenomena. The latest example is provided by 1T'-WTe$_2$, a semimetal recently…

介观与纳米尺度物理 · 物理学 2017-08-23 Lin Wang , Ignacio Gutiérrez-Lezama , Céline Barreteau , Nicolas Ubrig , Enrico Giannini , A. F. Morpurgo

Molybdenum disulfide (MoS$_2$) is a high-potential material for nanoelectronic applications, especially when thinned to a few layers. Liquid phase exfoliation enables large-scale fabrication of thin films comprising single- and few-layer…

材料科学 · 物理学 2024-11-19 Alireza Ghasemifard , Agnieszka Kuc , Thomas Heine

Semiconducting transition metal dichalcogenides (TMDs) are desired as active materials in optoelectronic devices due to their strong excitonic effects. They can be exfoliated from their parent layered materials with low-cost and for mass…

Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence…

Layered two-dimensional (2D) materials exhibit unique properties, expanding opportunities in material design. We investigate MX$_2$ transition metal dichalcogenides (TMDCs) (M = Mo, W; X = S, Se, Te) in homo- and heterobilayers with…

材料科学 · 物理学 2025-03-13 Yu-Hsiu Lin , William P. Comaskey , Jose L. Mendoza-Cortes

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…

介观与纳米尺度物理 · 物理学 2016-07-26 Di Wu , Xiao Li , Lan Luan , Xiaoyu Wu , Wei Li , Maruthi N. Yogeesh , Rudresh Ghosh , Zhaodong Chu , Deji Akinwande , Qian Niu , Keji Lai

Monolayer films of transition metal dichalcogenides (in particular, MoS2, MoSe2, WS2, and WSe2) can be considered as ideal systems for the studies of high-temperature electron-hole liquids. The quasi-two-dimensional nature of electrons and…

介观与纳米尺度物理 · 物理学 2020-05-12 P. L. Pekh , P. V. Ratnikov , A. P. Silin

We address the ballistic transmission of charge carriers across ordered line defects in monolayer transition metal dichalcogenides. Our study reveals the presence of a transport gap driven by spin-orbit interactions, spin and valley…

介观与纳米尺度物理 · 物理学 2016-06-23 Artem Pulkin , Oleg V. Yazyev

Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, steep sub-threshold swing and high carrier mobility offered…

应用物理 · 物理学 2019-01-09 Ansh , Jeevesh Kumar , Ravi K Mishra , Srinivasan Raghavan , Mayank Shrivastava
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