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Heterostructures made from topological and magnetic insulators promise to form excellent platforms for new electronic and spintronic functionalities mediated by interfacial effects. We report the results of a first-principles density…

材料科学 · 物理学 2021-09-27 Damien Tristant , Ilya Vekhter , Vincent Meunier , William Shelton

We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong…

强关联电子 · 物理学 2020-03-18 M. Serlin , C. L. Tschirhart , H. Polshyn , Y. Zhang , J. Zhu , K. Watanabe , T. Taniguchi , L. Balents , A. F. Young

The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic…

计算物理 · 物理学 2017-01-18 Chengxi Huang , Jian Zhou , Haiping Wu , Kaiming Deng , Puru Jena , Erjun Kan

The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin-orbit torques and…

介观与纳米尺度物理 · 物理学 2023-09-13 Hong Liu , Rhonald Burgos Atencia , Nikhil Medhekar , Dimitrie Culcer

Three-dimensional topological insulator films in contact with magnetic layers exhibit intriguing magneto-optical and magnetoelectric phenomena, but little is known beyond the linear response regime. We demonstrate that the presence of two…

介观与纳米尺度物理 · 物理学 2015-06-16 A. G. Mal'shukov , Hans Skarsvag , Arne Brataas

The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the…

材料科学 · 物理学 2009-11-10 R. Mathieu , A. Asamitsu , H. Yamada , K. S. Takahashi , M. Kawasaki , Z. Fang , N. Nagaosa , Y. Tokura

Magnetic frustrated systems have resurged in spintronics as optimal candidates for hosting three dimensional topological solitons, such as Shankar skyrmions and 4$\pi$-vortices, and other singular topological defects. These topological…

介观与纳米尺度物理 · 物理学 2021-12-14 Ricardo Zarzuela , Jairo Sinova

We investigate the quantum anomalous Hall Effect (QAHE) and related chiral transport in the millimeter-size (Cr0.12Bi0.26Sb0.62)2Te3 films. With high sample quality and robust magnetism at low temperatures, the quantized Hall conductance of…

We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to…

介观与纳米尺度物理 · 物理学 2020-12-30 N. Lebedev , M. Stehno , A. Rana , N. Gauquelin , J. Verbeeck , A. Brinkman , J. Aarts

Emerging magnetic fields related to the presence of topologically protected spin textures such as skyrmions are expected to give rise to additional, topology-related contributions to the Hall effect. In order to doubtlessly identify this…

We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as…

介观与纳米尺度物理 · 物理学 2020-04-14 Gang Shi , Mingjie Zhang , Dayu Yan , Honglei Feng , Meng Yang , Youguo Shi , Yongqing Li

Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric…

Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the…

介观与纳米尺度物理 · 物理学 2020-05-27 Huan-Wen Wang , Bo Fu , Shun-Qing Shen

Hall effect is an important phenomenon when a magnetic field is applied to materials. From the curve depicting the Hall resistance versus the magnetic field, crucial information such as carrier concentration can be extracted. If the curve…

The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects,…

强关联电子 · 物理学 2009-10-31 Y. Lyanda-Geller , S. H. Chun , M. B. Salamon , P. M. Goldbart , P. D. Han , Y. Tomioka , A. Asamitsu , Y. Tokura

We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a…

介观与纳米尺度物理 · 物理学 2017-08-02 S. Grauer , K. M. Fijalkowski , S. Schreyeck , M. Winnerlein , K. Brunner , R. Thomale , C. Gould , L. W. Molenkamp

The relative significance of quantum conductivity correction and magnetic nature of electrons in understanding the intriguing low-temperature resistivity minimum and negative magnetoresistance of the two-dimensional electron gas at…

强关联电子 · 物理学 2021-08-11 Xiaorong Zhou , Zhiqi Liu

In contrast to electron (fermion) systems, topological phases of charge neutral bosons have been poorly understood despite recent extensive research on insulating magnets. The most important unresolved issue is how the inevitable…

强关联电子 · 物理学 2022-01-19 S. Suetsugu , T. Yokoi , K. Totsuka , T. Ono , I. Tanaka , S. Kasahara , Y. Kasahara , Z. Chengchao , H. Kageyama , Y. Matsuda

We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and…

Spintronics, an evolving interdisciplinary field at the intersection of magnetism and electronics, explores innovative applications of electron charge and spin properties for advanced electronic devices. The topological Hall effect, a key…