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相关论文: Strain-tunable charge carrier mobility of atomical…

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The anisotropic charge carrier mobilities of two phenancene series compounds such as dibenzo[a,c]picene (DBP) and tribenzo[a,c,k]tetraphene (TBT) is investigated based on the first-principle calculations and Marcus-Hush theory. The…

化学物理 · 物理学 2019-10-28 Smruti R. Sahoo , Rudranarayan Khatua , Suryakanti Debata , Sagar Sharma , Sridha Sahu

In this study, we analyze the band structure, the state characterization, and electronic transport of monolayer black phosphorus (phosphorene) zigzag nanoribbons (zPNRs) and armchair nanoribbons (aPNRs), using five-parameter tight-binding…

介观与纳米尺度物理 · 物理学 2015-08-17 Esmaeil Taghizadeh Sisakht , Mohammad H. Zare , Farhad Fazileh

We systematically explore chemical functionalization of monolayer black phosphorene via chemisorption of oxygen and fluorine atoms. Using the cluster expansion technique, with vary- ing concentration of the adsorbate, we determine the…

材料科学 · 物理学 2016-04-14 Suhas Nahas , Barun Ghosh , Somnath Bhowmick , Amit Agarwal

By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandstructure is dramatically deformed and the degeneracy of the…

介观与纳米尺度物理 · 物理学 2015-07-13 Viet Hung Nguyen , Philippe Dollfus

Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from…

We analyze, using first-principles calculations and the method of invariants, the spin-orbit proximity effects in trilayer heterostructures comprising phosphorene and encapsulating WSe$_2$ monolayers. We focus on four different…

介观与纳米尺度物理 · 物理学 2024-02-29 Marko Milivojević , Martin Gmitra , Marcin Kurpas , Ivan Štich , Jaroslav Fabian

The electronic properties of monolayer phosphorene are exotic due to its puckered structure and large intrinsic direct band gap. We derive and discuss its band structure in the presence of a perpendicular magnetic field. Further, we…

介观与纳米尺度物理 · 物理学 2015-07-23 M. Tahir , P. Vasilopoulos , F. M. Peeters

Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging class of 2D semiconductors, we show that mobility modulation…

应用物理 · 物理学 2025-11-13 Sheikh Mohd Ta-Seen Afrid , He Lin Zhao , Arend M. van der Zande , Shaloo Rakheja

The anisotropic propagation of particles is a fundamental transport phenomenon in solid state physics. As for crystalline semiconductors, the anisotropic charge transport opens novel designing routes for electronic devices, where the…

材料科学 · 物理学 2025-12-15 Hong Jian Zhao , Yanchao Wang , Laurent Bellaiche , Yanming Ma

Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of…

材料科学 · 物理学 2021-05-06 Lunjie Zeng , Jonatan Holmer , Rohan Dhall , Christoph Gammer , Andrew M. Minor , Eva Olsson

We apply the generalized Boltzmann theory to describe thermoelectric transport properties of monolayer phosphorene in the presence of short- and long-range charged impurity interactions. First, we propose a low-energy Hamiltonian to explore…

介观与纳米尺度物理 · 物理学 2017-01-27 Moslem Zare , Babak Zare Rameshti , Farnood G. Ghamsari , Reza Asgari

Compounds from groups IV and V have been the focus of recent research due to their impressive physical characteristics and structural stability. In this study, the MX monolayers (M=Sn, Pb; N=P, As) are investigated with first-principles…

材料科学 · 物理学 2024-03-12 Bo Zhang , Wenhui Wan , Yong Liu , Yanfeng Ge

We investigate charge ordering in the Holstein model in the presence of anisotropic hopping, $t_x, t_y=1-\delta, 1 + \delta$, as a model of the effect of strain on charge density wave (CDW) materials. Using Quantum Monte Carlo simulations,…

强关联电子 · 物理学 2019-07-24 B. Cohen-Stead , N. C. Costa , E. Khatami , R. T. Scalettar

We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…

介观与纳米尺度物理 · 物理学 2013-03-21 E. H. Hwang , S. Das Sarma

We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the…

The effect of strain on the magnetic order and band structure of single-layer CrAsS$_4$ has been investigated by first-principles calculations based on density functional theory. We found that single-layer CrAsS$_4$ was an antiferromagnetic…

材料科学 · 物理学 2021-10-01 Tengfei Hu , Wenhui Wan , Yanfeng Ge , Yong Liu

The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and…

Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier…

介观与纳米尺度物理 · 物理学 2015-06-18 Steven P. Koenig , Rostislav A. Doganov , Hennrik Schmidt , A. H. Castro Neto , Barbaros Oezyilmaz

Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained La(2/3)Ca(1/3)MnO(3) thin films grown on…

强关联电子 · 物理学 2009-11-07 J. Klein , J. B. Philipp , G. Carbone , A. Vigliante , L. Alff , R. Gross

Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report…

介观与纳米尺度物理 · 物理学 2024-05-24 Rahul Paramanik , Tanima Kundu , Soumik Das , Alexey Barinov , Bikash Das , Sujan Maity , Mainak Palit , Sanjoy Kr Mahatha , Subhadeep Datta
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