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相关论文: Impact of valley phase and splitting on readout of…

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The effect of valley splitting on the readout of qubit states is theoretically investigated in a three-quantum-dot (QD) system. A single unit of the three-QD system consists of qubit-QDs and a channel-QD that is connected to a conventional…

介观与纳米尺度物理 · 物理学 2025-04-30 Tetsufumi Tanamoto , Keiji Ono

Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states…

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

介观与纳米尺度物理 · 物理学 2021-05-05 F. Borjans , X. Zhang , X. Mi , G. Cheng , N. Yao , C. A. C. Jackson , L. F. Edge , J. R. Petta

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…

The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…

介观与纳米尺度物理 · 物理学 2020-11-18 Nicholas E. Penthorn , Joshua S. Schoenfield , Lisa F. Edge , HongWen Jiang

Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic…

介观与纳米尺度物理 · 物理学 2016-07-27 Péter Boross , Gábor Széchenyi , Dimitrie Culcer , András Pályi

The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…

介观与纳米尺度物理 · 物理学 2022-01-25 Donovan Buterakos , Sankar Das Sarma

The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the…

介观与纳米尺度物理 · 物理学 2021-07-05 Bilal Tariq , Xuedong Hu

Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…

介观与纳米尺度物理 · 物理学 2018-09-05 J. Salfi , B. Voisin , A. Tankasala , J. Bocquel , M. Usman , M. Y. Simmons , L. C. L. Hollenberg , R. Rahman , S. Rogge

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

介观与纳米尺度物理 · 物理学 2013-07-01 C. H. Yang , A. Rossi , R. Ruskov , N. S. Lai , F. A. Mohiyaddin , S. Lee , C. Tahan , G. Klimeck , A. Morello , A. S. Dzurak

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

介观与纳米尺度物理 · 物理学 2015-05-18 Dimitrie Culcer , Lukasz Cywinski , Qiuzi Li , Xuedong Hu , S. Das Sarma

Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…

介观与纳米尺度物理 · 物理学 2024-01-12 Merritt P. Losert , M. A. Eriksson , Robert Joynt , Rajib Rahman , Giordano Scappucci , Susan N. Coppersmith , Mark Friesen

We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…

介观与纳米尺度物理 · 物理学 2018-05-02 Léo Bourdet , Yann-Michel Niquet

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…

With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…

介观与纳米尺度物理 · 物理学 2017-12-11 Neil Zimmerman , Peihao Huang , Dimitrie Culcer

We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…

Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle,…

介观与纳米尺度物理 · 物理学 2011-11-22 N. S. Lai , W. H. Lim , C. H. Yang , F. A. Zwanenburg , W. A. Coish , F. Qassemi , A. Morello , A. S. Dzurak

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…

介观与纳米尺度物理 · 物理学 2011-05-30 R. Rahman , J. Verduijn , N. Kharche , G. P. Lansbergen , G. Klimeck , L. C. L. Hollenberg , S. Rogge

The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…

介观与纳米尺度物理 · 物理学 2024-05-07 Jonas R. F. Lima , Guido Burkard
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