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相关论文: Thermoelectricity in correlated narrow-gap semicon…

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Iron based narrow gap semiconductors such as FeSi, FeSb2, or FeGa3 have received a lot of attention because they exhibit a large thermopower, as well as striking similarities to heavy fermion Kondo insulators. Many proposals have been…

强关联电子 · 物理学 2018-04-18 Jan M. Tomczak , K. Haule , G. Kotliar

Motivated by the peculiar behavior of FeSi and FeSb2 we study the effect of local electronic correlations on magnetic, transport and optical properties in a specific type of band insulator, namely a covalent insulator. Investigating a…

强关联电子 · 物理学 2009-03-11 J. Kunes , V. I. Anisimov

The intermetallic FeSi exhibits an unusual temperature dependence in its electronic and magnetic degrees of freedom, epitomized by the crossover from a low temperature non-magnetic semiconductor to a high temperature paramagnetic metal with…

强关联电子 · 物理学 2012-03-06 Jan M. Tomczak , K. Haule , G. Kotliar

The physical properties of the semiconductor FeSi with very narrow band gap, anomalous behavior of the magnetic susceptibility and metal-insulator transition at elevated temperatures attract gross interest due to the still controversial…

强关联电子 · 物理学 2018-09-26 Sergii Khmelevskyi , Georg Kresse , Peter Mohn

4$f$ electron-based topological Kondo insulators have long been researched for their potential to conduct electric current via protected surface states, while simultaneously exhibiting unusually robust insulating behavior in their…

We investigate the effect of electronic correlations onto the thermoelectricity of semi-conductors and insulators. Appealing to model considerations, we study various many-body renormalizations that enter the thermoelectric response. We…

材料科学 · 物理学 2010-08-13 Jan M. Tomczak , K. Haule , T. Miyake , A. Georges , G. Kotliar

The thermoelectric power factor of the narrow-gap semiconductor FeSb2 is greatly enhanced in comparison to the isostructural homologues FeAs2 and RuSb2. Comparative studies of magnetic and thermodynamic properties provide evidence that the…

强关联电子 · 物理学 2009-10-06 Peijie Sun , Niels Oeschler , Simon Johnsen , Bo B. Iversen , Frank Steglich

Recently, evidence for a conducting surface state below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the conducting surface state and the bulk phase of FeSi were probed via…

The two-band Hubbard model with the density of states obtained from the band calculation is applied for FeSi, which is suggested to be a Kondo insulator or a correlated band insulator. Using this model, the correlation effects on FeSi are…

强关联电子 · 物理学 2007-05-23 Kentaro Urasaki , Tetsuro Saso

The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At $T$\,$\approx$\,70 K, the position of both the high-temperature shoulder of the thermopower peak and…

强关联电子 · 物理学 2015-01-23 Peijie Sun , Beipei Wei , Dirk Menzel , Frank Steglich

We report thermoelectric studies of FeS$_{1-x}$Se$_x$ ($x$ = 0, 0.06) superconducting single crystals that feature high irreversibility fields and critical current density $J_c$ comparable to materials with much higher superconducting…

超导电性 · 物理学 2022-03-01 Yu Liu , Aifeng Wang , V. N. Ivanovski , Qianheng Du , V. Koteski , C. Petrovic

The effects of electronic correlations and orbital degeneracy on thermoelectric properties are studied within the context of multi-orbital Hubbard models on different lattices. We use dynamical mean field theory with iterative perturbation…

强关联电子 · 物理学 2015-06-16 Mehdi Kargarian , Gregory A. Fiete

Substitution of Sb in FeSb$_2$ by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass $m^*$. Spanning the entire range of the semiconductor-metal…

材料科学 · 物理学 2016-08-14 P. Sun , M. Søndergaard , Y. Sun , S. Johnsen , B. B. Iversen , F. Steglich

Kondo insulator like material FeSb2 was found to exhibit colossal Seebeck coefficient. It would have had huge potential in thermoelectric applications in cryogenic temperature range if it had not been for the large thermal conductivity.…

材料科学 · 物理学 2011-02-03 Kefeng Wang , Rongwei Hu , C. Petrovic

Thermoelectric materials operating at cryogenic temperatures are in high demand for efficient cooling and power generation in applications ranging from superconductors to quantum computing. The narrow band-gap semiconductor FeSb2, known for…

材料科学 · 物理学 2023-11-02 Deepak Gujjar , Sunidhi Gujjar , V. K. Malik , Hem C. Kandpal

We study thermoelectric transport at low temperatures in correlated Kondo insulators, motivated by the recent observation of a high thermoelectric figure of merit(ZT) in $FeSb_2$ at $T \sim 10 K$. Even at room temperature, correlations have…

材料科学 · 物理学 2013-08-14 Seungmin Hong , Pouyan Ghaemi , Joel E. Moore , Philip W. Phillips

We study the electric and thermoelectric transport properties of correlated quantum dots coupled to two ferromagnetic leads and one superconducting electrode. Transport through such hybrid devices depends on the interplay of…

介观与纳米尺度物理 · 物理学 2015-06-19 Krzysztof P. Wojcik , Ireneusz Weymann

The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x…

强关联电子 · 物理学 2009-11-10 S. Yeo , S. Nakatsuji , A. D. Bianchi , P. Schlottmann , Z. Fisk , L. Balicas , P. A. Stampe , R. J. Kennedy

Analysis on very detailed measurements of resistivity ($ \rho $) and thermoelectric power (S) of magnetic impurity (Co) substituted iron silicide (FeSi) has been presented in this report. The impurity valence electrons of Co dominate the…

强关联电子 · 物理学 2021-12-17 M. Krishnan , V. Ganesan

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…

强关联电子 · 物理学 2009-11-07 R. Fletcher , V. M. Pudalov , A. D. B. Radcliffe , C. Possanzini
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