相关论文: Band-pass superlattice magnetic tunnel junctions
The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to…
This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…
Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
We investigate supercurrent-induced magnetization dynamics in a Josephson junction with two misaligned ferromagnetic layers, and demonstrate a variety of effects by solving numerically the Landau-Lifshitz-Gilbert equation. In particular, we…
In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of…
We demonstrate that spin PN junctions-magnetic semiconductor homojunctions with spin splitting-induced band offsets-fundamentally redefine carrier transport via spin-dependent recom bination probabilities. By integrating this mechanism into…
Noncolinear magnetic texture breaks the spin-sublattice symmetry which gives rise to a spin-splitting effect. Inspired by this, we study the spin-dependent transport properties in a noncolinear antiferromagnetic fractal structure, namely,…
We study electronic transport in junctions consisting of a superconductor electrode and two ferromagnet (F) leads in which crossed Andreev reflections (CAR) and elastic cotunnelings are accommodated. We model the system using an extended…
Efforts have been ongoing to establish superconducting spintronics utilizing ferromagnet/superconductor heterostructures1. Previously reported devices are based on spin-singlet superconductors (SSCs), where the spin degree of freedom is…
Engineering and controlling heat and spin transport on the femtosecond time-scale in spintronic devices opens up new ways to manipulate magnetization with unprecedented speed. Yet the underlying reversal mechanisms remain poorly understood…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…
We present model calculations for the Landauer conductance of tunnel junctions. The tunneling of free electrons through a rectangular potential barrier is considered. The conductance of a finite number of barriers was calculated using a…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
We review recent work on superlattices in monolayer and bilayer graphene. We highlight the role of the quasiparticle chirality in generating new Dirac fermion modes with tunable anisotropic velocities in one dimensional (1D) superlattices…
Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological…
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…