相关论文: Voltage Control of Uni-directional Anisotropy in F…
The emergence of multiferroic materials, which possess both ferromagnetic (FM) and ferroelectric (FE) properties, drive advancements in magnetoelectric applications and the next generation of spintronics. Based on first-principles…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient…
The temperature dependence of exchange bias properties are studied in polycrystalline $ \mathrm{BiFeO_3} / \mathrm{Ni_{81}Fe_{19}} $ bilayers, for different $ \mathrm{BiFeO_3} $ thicknesses. Using a field cooling protocol, a non-monotonic…
Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements, superconducting field-effect transistors (FETs), and gate-tunable qubits. Superconducting FETs operate through…
A comparative study of the non-equilibrium magnetic phenomena (magnetic blocking, memory, exchange bias and aging effect) has been presented for ferrimagnetic Co$_{1.75}$Fe$_{1.25}$O$_4$ (CFO) and its composite with non-magnetic BaTiO$_3$…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
Exchange bias is one of the most extensively studied phenomena in magnetism, since it exerts a unidirectional anisotropy to a ferromagnet (FM) when coupled to an antiferromagnet (AFM) and the control of the exchange bias is therefore very…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
Electrical manipulation of antiferromagnetic states, a cornerstone of antiferromagnetic spintronics, is a great challenge, requiring novel material platforms. Here we report the full control over antiferromagnetic states by voltage pulses…
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…
We present a microscopic theory that shows the importance of spin-orbit coupling in perovskite compounds with heavy ions. In BiFeO3 (BFO) the spin-orbit coupling at the bismuth ion sites results in a special kind of magnetic anisotropy that…
The exchange bias at ferromagnetic/antiferromagnetic interfaces strongly depends upon the state of antiferromagnetic (AF) layer which, due to strong magnetoelastic coupling, is sensitive to mechanical stresses. In the present paper we…
Exchange bias is a horizontal shift of the hysteresis loop observed for a ferromagnetic layer in contact with an antiferromagnetic layer. Since exchange bias is related to the spin structure of the antiferromagnet, for its fundamental…
As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
We propose a way to use electric-field to control the magnetic ordering of the tetragonal BiFeO3. Based on systematic first-principles studies of the epitaxial strain effect on the ferroelectric and magnetic properties of the tetragonal…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3…
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…