相关论文: Voltage Control of Uni-directional Anisotropy in F…
Magnetoelectric coupling in ferromagnet/multiferroic systems is often manifested in the exchange bias effect, which may have combined contributions from multiple sources, such as domain walls, chemical defects or strain. In this study we…
We show from detailed magnetometry across 2-300 K that the BiFeO$_3$-Bi$_2$Fe$_4$O$_9$ nanocomposite offers a unique spin morphology where superspin glass (SSG) and dilute antiferromagnet in a field (DAFF) coexist at the interface between…
Antiferromagnets (AFMs) hold significant potential for spintronic devices owing to their insensitivity to external magnetic fields and the absence of stray fields. Beyond these inherent advantages, an AFM can manipulate the magnetic…
Spin-splitting antiferromagnets with spin-polarized band structures in momentum space have garnered intensive research attention due to their zero net magnetic moments, ultras fast spin dynamics as conventional antiferromagnets, and…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
The spin configuration in the ferromagnetic part during the magnetization reversal plays a crucial role in the exchange bias effect. Through Monte Carlo simulation, the exchange bias effect in ferromagnetic-antiferromagnetic core-shell…
The exchange bias (EB) effect, arising from interfacial coupling between ferromagnetic (FM) and antiferromagnetic (AF) layers, induces a unidirectional magnetic anisotropy and underpins a wide range of spintronic functionalities. Extending…
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through…
We have directly imaged reversible electrical switching of the cycloidal rotation direction (magnetic polarity) in a (111)-BiFeO3 epitaxial-film device at room temperature by non-resonant x-ray magnetic scattering. Consistent with previous…
We report on the new polycrystalline exchange bias system MnN/CoFe, which shows exchange bias of up to 1800Oe at room temperature with a coercive field around 600Oe. The room temperature values of the interfacial exchange energy and the…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
Magnons provide a route to ultra-fast transport and non-destructive readout of spin-based information transfer. Here, we report magnon transport and its emergent anisotropic nature in BiFeO$_3$ layers confined between ultrathin layers of…
Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic…
Multiferroics, which combine ferroelectric and magnetic order, offer a transformative platform for next-generation electronic devices. However, the intrinsic competition between the mechanisms driving ferroelectricity and magnetism in…
The realization of fully reconfigurable, voltage-controlled, and programmable on-chip magnonic devices is essential to fully harness the potential of spin waves for signal processing, logic and neuromorphic computing. Yet, existing…
We utilize transverse ac susceptibility measurements to characterize magnetic anisotropy in archetypal exchange-bias bilayers of ferromagnet Permalloy (Py) and antiferromagnet CoO. Unidirectional anisotropy is observed for thin Py, but…
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of…
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear…
Frustrated antiferromagnets offer a captivating platform to study the intricate relationship of magnetic interactions, geometric constraints, and emergent phenomena. By controlling spin orientations, these materials can be tailored for…
Freestanding ferroelectric membranes are promising for flexible electronics, nonvolatile memory, photonics, and spintronics, but their synthesis is challenged by the need for reproducibility with precise stoichiometric control. Here, we…