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We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…

Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion…

介观与纳米尺度物理 · 物理学 2017-05-16 Gang Luo , Zhuo-Zhi Zhang , Guang-Wei Deng , Hai-ou Li , Gang Cao , Ming Xiao , Guoping Guo , Guang-Can Guo

Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are…

We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an…

介观与纳米尺度物理 · 物理学 2012-03-06 Xuefeng Song , Mika Oksanen , Mika A. Sillanpää , H. G. Craighead , J. M. Parpia , Pertti J. Hakonen

We experimentally investigate electrical transport properties of graphene, which is a two dimensional (2D) conductor with relativistic energy dispersion relation. By investigating single- and bi-layer graphene devices with different aspect…

介观与纳米尺度物理 · 物理学 2009-11-13 F. Miao , S. Wijeratne , U. Coskun , Y. Zhang , C. N. Lau

We calculate the temperature dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature dependent screening of the Coulomb disorder without any phonons. The purely…

介观与纳米尺度物理 · 物理学 2009-05-22 E. H. Hwang , S. Das Sarma

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…

介观与纳米尺度物理 · 物理学 2016-07-04 Prosper Ngabonziza , Martin P. Stehno , Hiroaki Myoren , Viola A. Neumann , Gertjan Koster , Alexander Brinkman

The ability to perform first-principles calculations of electronic and vibrational properties of two-dimensional heterostructures in a field-effect setup is crucial for the understanding and design of next-generation devices. We present…

材料科学 · 物理学 2017-09-06 Thibault Sohier , Matteo Calandra , Francesco Mauri

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…

介观与纳米尺度物理 · 物理学 2011-05-05 Nikolaos Tombros , Csaba Jozsa , Mihaita Popinciuc , Harry T. Jonkman , Bart J. van Wees

Distribution of charge induced by a gate voltage in a graphene strip is investigated. We calculate analytically the charge profile and demonstrate a strong(macroscopic) charge accumulation along the boundaries of a micrometers-wide strip.…

介观与纳米尺度物理 · 物理学 2008-06-04 P. G. Silvestrov , K. B. Efetov

We present a theory of the graphene nanoslide, a fundamental device for graphene straintronics that realizes a single pseudogauge barrier. We solve the scattering problem in closed form and demonstrate that the nanoslide gives rise to a…

介观与纳米尺度物理 · 物理学 2026-05-18 Christophe De Beule , Ming-Hao Liu , Bart Partoens , Lucian Covaci

Valley-dependent topological physics offers a promising avenue for designing nanoscale devices based on gapless single-layer graphene. To demonstrate this potential, we investigate an electrical bias-controlled topological discontinuity in…

介观与纳米尺度物理 · 物理学 2026-01-26 Zheng-Han Huang , Jing-Yuan Lai , Yu-Shu G. Wu

The acoustoelectric effect $AE$ in Graphene with degenerate energy dispersion is theoretically studied for hypersound in the regime $ql >> 1$. At low temperatures ($k_{\beta}T <<1$), the non-linear dependence of Acoustoelectric current…

介观与纳米尺度物理 · 物理学 2015-05-22 K. A. Dompreh , N. G. Mensah , S. Y. Mensah

A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas…

介观与纳米尺度物理 · 物理学 2015-04-10 Christopher Coleman , Davie Mtsuko , Chris Botha , Somnath Bhattacharyyaa

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…

材料科学 · 物理学 2007-12-29 F. T. Vasko , V. Ryzhii

Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect transistors (GFET) in the present study. Trapped charge…

介观与纳米尺度物理 · 物理学 2025-12-10 Nikolaos Mavredakis , Anibal Pacheco-Sanchez , David Jimenez

The effect of inclusion of the planar phonon anisotropy on thermo-electrical behavior of graphene is analyzed. Charge transport is simulated by means of Direct Simulation Monte Carlo technique coupled with numerical solution of the phonon…

介观与纳米尺度物理 · 物理学 2023-05-30 Marco Coco

The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical…

介观与纳米尺度物理 · 物理学 2020-12-24 Maryam Mahdavifar , Sima Shekarforoush , Farhad Khoeini

The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…

Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…

介观与纳米尺度物理 · 物理学 2015-05-13 M. Popinciuc , C. Józsa , P. J. Zomer , N. Tombros , A. Veligura , H. T. Jonkman , B. J. van Wees
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